[HTML][HTML] Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …
the semiconductor device community due to their potential to enhance device performance …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Advancements in energy efficient GaN power devices and power modules for electric vehicle applications: a review
The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role
in various applications such as adapters, uninterrupted power supplies, smart grids, and …
in various applications such as adapters, uninterrupted power supplies, smart grids, and …
[HTML][HTML] Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN
The integration of two-dimensional MoS 2 with GaN recently attracted significant interest for
future electronic/optoelectronic applications. However, the reported studies have been …
future electronic/optoelectronic applications. However, the reported studies have been …
Atomic-scale simulation of ultrasonic vibration-assisted polishing process for graphene/GaN-layered composites
H He, T Gao, Y Liu, Q Chen, Q **e, Y Liang… - Materials Science in …, 2024 - Elsevier
In the realm of semiconductor materials, the integration of graphene (Gr) and gallium nitride
(GaN) has emerged as a promising avenue for enhancing device performance. In this study …
(GaN) has emerged as a promising avenue for enhancing device performance. In this study …
Diffusion-limited crystal growth of gallium nitride using active machine learning
Gallium nitride (GaN) is an important semiconductor with properties that make it particularly
suitable for high-temperature applications in power systems. Unfortunately, its crystalline …
suitable for high-temperature applications in power systems. Unfortunately, its crystalline …
[CARTE][B] Extreme-temperature and harsh-environment electronics: physics, technology and applications
VK Khanna - 2023 - iopscience.iop.org
Electronic devices and circuits are employed by a range of industries in unfriendly
conditions, such as exposure to extreme temperatures, humidity, or radiation. This second …
conditions, such as exposure to extreme temperatures, humidity, or radiation. This second …
Review of GaN optical device characteristics, applications, and optical analysis technology
This scientific paper represents a review of progress and developments which more
concerned in Nanophotonic Gallium nitride. Because of the expansion in modern optical …
concerned in Nanophotonic Gallium nitride. Because of the expansion in modern optical …
Review of high-temperature power electronics converters
Power electronics converters operating at elevated temperature usually have degraded
performance, such as reduced efficiency, lower noise immunity, and decreased system …
performance, such as reduced efficiency, lower noise immunity, and decreased system …