Research in the field of electronics of 1D group-IV semiconductor structures has attracted
increasing attention over the past 15 years. The exceptional combination of the unique 1D …

Abstract The Short Channel Effects (SCE) are becoming more prominent in Complementary
Metal Oxide Semiconductor (CMOS) circuits with the introduction of nanoscale Metal Oxide …

The junctionless transistor consists of a piece of uniformly doped semiconductor with a gate
placed between the source and drain contacts and is, therefore, the simplest transistor …

In this paper, we report the logic performance of CMOS circuits implemented with n-and p-
channel junctionless (JL) FinFETs. A one-to-one comparison of the performance is made …

In this work, we revisit the requirement of higher channel do** (≥ 10 19 cm− 3) in
junctionless (JL) double gate MOSFETs. It is demonstrated that moderately doped (10 18 …

The low-frequency noise behavior of junction-less (JL) gate-all-around (GAA) nanowire
(NW) FETs has been investigated and compared with similar inversion-mode (IM) devices. It …

Electron transport in Si double-gate junctionless transistors (JLTs) is simulated on the basis
of the multisubband Monte Carlo method, considering acoustic phonons, intervalley …

In this paper, we target the compact capacitance modeling of organic thin-film transistor
(OTFTs) valid from depletion to accumulation regime taking into account the frequency …

In this letter, we presented theoretical results on the low-field electron mobility of ultrathin-
body double-gate junctionless transistors. A 1D Poisson-Schrödinger problem …

We report here the first realization of top-down silicon nanowires (SiNW) transduced by both
junction-less field-effect transistor (FET) and the piezoresistive (PZR) effect. The suspended …