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Magnetic device having multilayered free ferromagnetic layer
US PATENT DOCUMENTS 5,347,485 A 9/1994 Taguchi et al. 5.432, 734 A 7/1995 Kawano
et al. 5.448, 515 A 9, 1995 Fukami et al. 5,695,864 A 12/1997 Slonczewski 5,949,622 A …
et al. 5.448, 515 A 9, 1995 Fukami et al. 5,695,864 A 12/1997 Slonczewski 5,949,622 A …
Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
Magnetic multilayer structures, such as magnetic or magne toresistive tunnel junctions
(MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically …
(MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically …
Composed free layer for stabilizing magnetoresistive head having low magnetostriction
Background Art 0002. In the related art magnetic recording technology Such as hard disk
drives, a head is equipped with a reader and a writer. The reader and writer have separate …
drives, a head is equipped with a reader and a writer. The reader and writer have separate …
Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
GS Sandhu, W Kula - US Patent 9,461,242, 2016 - Google Patents
A magnetic cell includes a free region between an interme diate oxide region (eg, a tunnel
barrier) and a secondary oxide region. Both oxide regions may be configured to induce …
barrier) and a secondary oxide region. Both oxide regions may be configured to induce …
Memory cells, methods of fabrication, and semiconductor devices
(57) ABSTRACT A magnetic cell includes an attracter material proximate to a magnetic
region (eg, a free region). The attracter material is formulated to have a higher chemical …
region (eg, a free region). The attracter material is formulated to have a higher chemical …
Memory cells, semiconductor device structures, memory systems, and methods of fabrication
WI Kinney, W Kula, SJ Kramer - US Patent 9,054,030, 2015 - Google Patents
US9054030B2 - Memory cells, semiconductor device structures, memory systems, and
methods of fabrication - Google Patents US9054030B2 - Memory cells, semiconductor …
methods of fabrication - Google Patents US9054030B2 - Memory cells, semiconductor …
Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
W Kula, WI Kinney, GS Sandhu - US Patent 9,466,787, 2016 - Google Patents
(51) Int. Cl. A magnetic cell core includes a seed region with a plurality HOIL 43/12(2006.01)
of magnetic regions and a plurality of nonmagnetic regions HOL 43/08(2006.01) thereover …
of magnetic regions and a plurality of nonmagnetic regions HOL 43/08(2006.01) thereover …
Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
A magnetic cell includes a magnetic region formed from a precursor magnetic material
comprising a diffusive species and at least one other species. An amorphous region is proxi …
comprising a diffusive species and at least one other species. An amorphous region is proxi …
Memory cells, semiconductor devices, and methods of fabrication
US9349945B2 - Memory cells, semiconductor devices, and methods of fabrication - Google
Patents US9349945B2 - Memory cells, semiconductor devices, and methods of fabrication …
Patents US9349945B2 - Memory cells, semiconductor devices, and methods of fabrication …
Memory cells, methods of fabrication, and semiconductor devices
A magnetic cell includes a magnetic tunnel junction that comprises magnetic and
nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal …
nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal …