Semiconductor nanowires, by definition, typically have cross-sectional dimensions that can
be tuned from 2–200 nm, with lengths spanning from hundreds of nanometres to millimetres …

Over the past decade, tremendous progress has been achieved in the development of
nanoscale semiconductor materials with a wide range of bandgaps by alloying different …

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are
addressed. The axial and radial growth rates as a function of the Ga rate and As pressure …

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si
substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned …

We report on control of growth directions of InAs nanowires on Si substrate. We achieved to
integrate vertical InAs nanowires on Si by modifying initial Si (111) surface in selective-area …

A review and expansion of the fundamental processes of the vapor–liquid–solid (VLS)
growth mechanism for nanowires is presented. Although the focus is on nanowires, most of …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Catalyst-free, direct heteroepitaxial growth of vertical InAs nanowires on Si (111) substrates
was accomplished over a large area by metal− organic chemical vapor deposition …

Group III− V nanowires offer the exciting possibility of epitaxial growth on a wide variety of
substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free …

The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon
integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or …