Trap** effects on AlGaN/GaN HEMT characteristics
This paper describes device simulation studies of surface and buffer trap** effects on
static IV, output-admittance (Y 22), and transient characteristics of AlGaN/GaN HEMTs. The …
static IV, output-admittance (Y 22), and transient characteristics of AlGaN/GaN HEMTs. The …
Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
S Latrach, E Frayssinet, N Defrance, S Chenot… - Current Applied …, 2017 - Elsevier
The paper deals with trap effects in InAlN/AlN/GaN and AlGaN/AlN/GaN high electron
mobility transistor structures using frequency dependent conductance and High-Low …
mobility transistor structures using frequency dependent conductance and High-Low …
2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
For the commercial implementation of GaN-based high electron mobility transistor (HEMT)
and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two …
and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two …
GaN HEMT for High-performance Applications: A Revolutionary Technology
G Pattnaik, M Mohapatra - Recent Advances in Electrical & …, 2024 - benthamdirect.com
Background: The upsurge in the field of radio frequency power electronics has led to the
involvement of wide bandgap semiconductor materials because of their potential …
involvement of wide bandgap semiconductor materials because of their potential …
Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors
MA Alim, AA Rezazadeh… - … Science and Technology, 2016 - iopscience.iop.org
Shifts in the threshold voltage VT subject to temperature in AlGaN/GaN-based high-electron-
mobility transistors (HEMTs) grown on silicon carbide substrate are reported. Variation of VT …
mobility transistors (HEMTs) grown on silicon carbide substrate are reported. Variation of VT …
Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate
MA Alim, AA Rezazadeh… - … Science and Technology, 2015 - iopscience.iop.org
This paper investigated the temperature effects on the performance of the AlGaN/GaN high
electron mobility transistor (HEMT) with a 150 nm and 250 nm gate length on a SiC …
electron mobility transistor (HEMT) with a 150 nm and 250 nm gate length on a SiC …
Trap** phenomena in InAlN/GaN high electron mobility transistors
Electron trap**-detrap** phenomena were studied for InAlN/GaN high electron mobility
transistors (HEMTs) by drain current-drain voltage static and pulsed current voltage (IV) …
transistors (HEMTs) by drain current-drain voltage static and pulsed current voltage (IV) …
Degradation mechanisms of InP-based high-electron-mobility transistors under 1 MeV electron irradiation
S Sun, B Yang, Y Zhong, Y Li, P Ding… - Journal of Physics D …, 2020 - iopscience.iop.org
In this paper, InP-based high electron mobility transistors were investigated for an electron
fluence of 5× 10 15 cm− 2 at 1 MeV. The channel current and transconductance were …
fluence of 5× 10 15 cm− 2 at 1 MeV. The channel current and transconductance were …
S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application
Reliability studies are fundamental to optimize the use of new emerging technologies such
as AlGaN/GaN HEMTs. This paper reports a reliability study on two power amplifiers using …
as AlGaN/GaN HEMTs. This paper reports a reliability study on two power amplifiers using …
Understanding the trap-induced frequency dispersion in the C–V curve of AlGaN/GaN hetero-structure
This article investigates the trap** mechanism in AlGaN/GaN heterostructure. For our
study, the traps within the AlGaN layer are introduced at the interface and near the interface …
study, the traps within the AlGaN layer are introduced at the interface and near the interface …