A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band

T Maiwald, T Li, GR Hotopan, K Kolb… - Proceedings of the …, 2023 - ieeexplore.ieee.org
The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …

A review of technologies and design techniques of millimeter-wave power amplifiers

V Camarchia, R Quaglia, A Piacibello… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …

High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI

S Li, GM Rebeiz - IEEE Journal of Solid-State Circuits, 2022 - ieeexplore.ieee.org
This article presents fully integrated power amplifiers (PAs) with eight-way low-loss power
combining for-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight …

An eight-element 136–147 GHz wafer-scale phased-array transmitter with 32 dBm peak EIRP and> 16 Gbps 16QAM and 64QAM operation

S Li, Z Zhang, GM Rebeiz - IEEE Journal of Solid-State Circuits, 2022 - ieeexplore.ieee.org
This article presents a 140-GHz eight-element wafer-scale phased-array transmitter based
on intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control in the …

A high-efficiency 142–182-GHz SiGe BiCMOS power amplifier with broadband slotline-based power combining technique

X Li, W Chen, S Li, Y Wang, F Huang… - IEEE Journal of Solid …, 2021 - ieeexplore.ieee.org
In this article, a high-efficiency broadband millimeter-wave (mm-Wave) integrated power
amplifier (PA) with a low-loss slotline-based power combing technique is proposed. The …

A 140GHz power amplifier with 20.5 dBm output power and 20.8% PAE in 250-nm InP HBT technology

ASH Ahmed, M Seo, AA Farid… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
We report a high-efficiency D-band power amplifier in 250nm InP HBT technology. The
design has three common-base stages and a low-loss 4: 1 transmission-line output power …

24.7 A 15dBm 12.8%-PAE compact D-band power amplifier with two-way power combining in 16nm FinFET CMOS

B Philippe, P Reynaert - 2020 IEEE International Solid-State …, 2020 - ieeexplore.ieee.org
The drive for higher data-rates has led to the allocation of the spectrum above 100GHz for D-
band communication. A high level of integration in a nm-CMOS technology is necessary to …

A 124-to-152-GHz power amplifier exploiting Chebyshev-type two-section wideband and low-loss power-combining technique in 28-nm CMOS

J Zhang, Y Wang, Y Chen, J Ren… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article presents a high-power wideband power amplifier (PA) with a four-way power-
combining technique for-band high-resolution radar. The power combiner is based on a two …

A 115-151 GHz Multi-Feed Active Antenna with In-Antenna Power Combining

J Wan, S Hu, Y Shen, Y Ding, A Bhutani… - … on Antennas and …, 2024 - ieeexplore.ieee.org
This article presents a high-integrated, wideband, multifeed, active antenna with in-antenna
power combining for D-band applications. The proposed design consists of an active section …

A Compact 140-GHz Power Amplifier With 15.4-dBm Psat and 14.25% Peaking PAE in 28-nm Bulk CMOS Process

L Zhang, K Ma, H Fu, Y Wang, K Wang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a fully integrated high-power and high-efficiency-band power amplifier
(PA) with two-way differential power combining in a 28-nm bulk CMOS process. The overall …