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A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band
T Maiwald, T Li, GR Hotopan, K Kolb… - Proceedings of the …, 2023 - ieeexplore.ieee.org
The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …
data-intensive applications in modern society. Integrated millimeter-wave systems with …
A review of technologies and design techniques of millimeter-wave power amplifiers
This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …
focusing on broadband design techniques. An overview of the main solid-state technologies …
High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI
This article presents fully integrated power amplifiers (PAs) with eight-way low-loss power
combining for-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight …
combining for-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight …
An eight-element 136–147 GHz wafer-scale phased-array transmitter with 32 dBm peak EIRP and> 16 Gbps 16QAM and 64QAM operation
This article presents a 140-GHz eight-element wafer-scale phased-array transmitter based
on intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control in the …
on intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control in the …
A high-efficiency 142–182-GHz SiGe BiCMOS power amplifier with broadband slotline-based power combining technique
In this article, a high-efficiency broadband millimeter-wave (mm-Wave) integrated power
amplifier (PA) with a low-loss slotline-based power combing technique is proposed. The …
amplifier (PA) with a low-loss slotline-based power combing technique is proposed. The …
A 140GHz power amplifier with 20.5 dBm output power and 20.8% PAE in 250-nm InP HBT technology
We report a high-efficiency D-band power amplifier in 250nm InP HBT technology. The
design has three common-base stages and a low-loss 4: 1 transmission-line output power …
design has three common-base stages and a low-loss 4: 1 transmission-line output power …
24.7 A 15dBm 12.8%-PAE compact D-band power amplifier with two-way power combining in 16nm FinFET CMOS
The drive for higher data-rates has led to the allocation of the spectrum above 100GHz for D-
band communication. A high level of integration in a nm-CMOS technology is necessary to …
band communication. A high level of integration in a nm-CMOS technology is necessary to …
A 124-to-152-GHz power amplifier exploiting Chebyshev-type two-section wideband and low-loss power-combining technique in 28-nm CMOS
J Zhang, Y Wang, Y Chen, J Ren… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article presents a high-power wideband power amplifier (PA) with a four-way power-
combining technique for-band high-resolution radar. The power combiner is based on a two …
combining technique for-band high-resolution radar. The power combiner is based on a two …
A 115-151 GHz Multi-Feed Active Antenna with In-Antenna Power Combining
J Wan, S Hu, Y Shen, Y Ding, A Bhutani… - … on Antennas and …, 2024 - ieeexplore.ieee.org
This article presents a high-integrated, wideband, multifeed, active antenna with in-antenna
power combining for D-band applications. The proposed design consists of an active section …
power combining for D-band applications. The proposed design consists of an active section …
A Compact 140-GHz Power Amplifier With 15.4-dBm Psat and 14.25% Peaking PAE in 28-nm Bulk CMOS Process
This article presents a fully integrated high-power and high-efficiency-band power amplifier
(PA) with two-way differential power combining in a 28-nm bulk CMOS process. The overall …
(PA) with two-way differential power combining in a 28-nm bulk CMOS process. The overall …