An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

The relatively less exploited terahertz band possesses great potential for a variety of
important applications, including communication applications that would benefit from the …

SiGe BiCMOS is in its fourth lithographic generation since introduction of the 0.5/spl mu/m.
The key component is the SiGe-base HBT whose performance (f/sub T/, f/sub MAX/) is …

A differential comparator that can sample 40-Gb/s signals and that operates off a single 1.2-
V supply was designed and fabricated in 0.11-/spl mu/m standard CMOS technology. It …

For wireline transmitters delivering a high-speed multi-level signal, such as pulse-amplitude-
modulation-4 or duobinary, a high-performance multiplexer (MUX) is critical to serialize the …

Considerable progress has been made in integrating multi-Gb/s functions into silicon chips
for data-and telecommunication applications. This paper reviews the key requirements for …

A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate
high output voltage swings using transistors with low breakdown voltages. The timing …

A 45-Gb/s BiCMOS decision circuit operating from a 2.5-V supply is reported. The full-rate
retiming flip-flop operates from the lowest supply voltage of any silicon-based flip-flop …

A-3.3-V half-rate clock 4: 1 multiplexer implemented in a 210-GHz f/sub T/0.13-/spl mu/m
SiGe-bipolar technology and operating up to 132 Gb/s is reported. Among many design …

A 43-Gb/s receiver (Rx) and transmitter (Tx) chip set for SONET OC-768 transmission
systems is reported. Both ICs are implemented in a 0.18-μm SiGe BiCMOS technology …