With the development of microelectronics, the demand for continuously miniaturized feature
sizes has driven continuous progress in lithography technology. Extreme ultraviolet (EUV) …

Sub-10 nm patterning with extreme ultraviolet (EUV) light is receiving immediate attention as
a next-generation nanolithography technique, but photoresist materials optimized to EUV …

The need for decreasing semiconductor device critical dimensions at feature sizes below the
20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) …

The semiconductor industry has witnessed a continuous decrease in the size of logic,
memory and other computer chip components since its birth over half a century ago. The …

This report describes recent developments and current needs in the field of high-resolution
photopolymers and photomolecules briefly describing prior generation lithographic …

The semiconductor industry has long been driven by advances in a nanofabrication
technology known as lithography, and the fabrication of nanostructures on chips relies on an …

Extreme ultraviolet (EUV) lithography (13.5 nm) is the newest technology that allows high-
throughput fabrication of electronic circuitry in the sub-20 nm scale. It is commonly assumed …

Nonchemically amplified resists based on triphenyl sulfonium triflate-modified polystyrene
(PSTS) were prepared by a facile method of modification of polystyrene with sulfonium …

We report a new photoresist based on a multinuclear tin-based macrocyclic complex and its
performance for extreme UV (EUV) photolithography. The new photoresist has a trinuclear …

Recently, the development of novel metal-containing resists has received much attention in
extreme ultraviolet lithography (EUVL) owing to their smaller sizes and higher EUV …