Recent progress in ohmic contacts to silicon carbide for high-temperature applications
Z Wang, W Liu, C Wang - Journal of Electronic Materials, 2016 - Springer
During the past few decades, silicon carbide (SiC) has emerged as the most promising wide-
bandgap semiconductor for high-temperature, high-frequency, and high-power applications …
bandgap semiconductor for high-temperature, high-frequency, and high-power applications …
Effect of different metal materials on the formation of Ohmic contacts to p-type SiC: A review
S Yu, F Yang, WC Yang, W **e - Journal of Alloys and Compounds, 2024 - Elsevier
As an emerging member of the semiconductor family, the third-generation semiconductor
SiC has physical properties such as a wide bandgap, high critical field strength, and high …
SiC has physical properties such as a wide bandgap, high critical field strength, and high …
interface: Atomic structure, energetics, and bonding
Z Wang, S Tsukimoto, M Saito, Y Ikuhara - Physical Review B—Condensed …, 2009 - APS
The structural, electronic, and adhesive properties of the 4 H-SiC (0001)/Ti 3 SiC 2 (0001)
interface are systematically investigated by first-principles calculations. A total of 96 …
interface are systematically investigated by first-principles calculations. A total of 96 …
A critical review of theory and progress in Ohmic contacts to p-type SiC
L Huang, M **a, X Gu - Journal of Crystal Growth, 2020 - Elsevier
Silicon carbide (SiC) is a promising candidate in high-temperature, high-frequency and high-
power applications due to its outstanding properties such as wide band gap, high critical …
power applications due to its outstanding properties such as wide band gap, high critical …
Ohmic contacts on silicon carbide: The first monolayer and its electronic effect
Z Wang, S Tsukimoto, M Saito, K Ito, M Murakami… - Physical Review B …, 2009 - APS
We demonstrate that origin of the long-standing contact issue in silicon carbide devices can
be understood and technologically manipulated at the atomic level. Using advanced …
be understood and technologically manipulated at the atomic level. Using advanced …
SiC die attach for high-temperature applications
A Drevin-Bazin, F Lacroix, JF Barbot - Journal of electronic materials, 2014 - Springer
Abstract Eutectic solders AuIn19 and AuGe12 and nanosilver paste were investigated for
SiC die attach in high-temperature (300° C) applications. The soldering or sintering …
SiC die attach in high-temperature (300° C) applications. The soldering or sintering …
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC
In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type
implanted silicon carbide (4H-SiC) were studied employing different techniques. With …
implanted silicon carbide (4H-SiC) were studied employing different techniques. With …
Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti
We report a single-step procedure for growth of ohmic Ti 3 SiC 2 on 4H-SiC by sputter-
deposition of Ti at 960° C, based on the Ti–SiC solid-state reaction during deposition. X-ray …
deposition of Ti at 960° C, based on the Ti–SiC solid-state reaction during deposition. X-ray …
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
In this work, the morphological, structural, and electrical properties of Ti/Al/W contacts to p-
type implanted silicon carbide (4H-SiC) have been monitored as a function of the annealing …
type implanted silicon carbide (4H-SiC) have been monitored as a function of the annealing …
Thermal stability study of n-type and p-type ohmic contacts simultaneously formed on 4H-SiC
Y Zhang, T Guo, X Tang, J Yang, Y He… - Journal of Alloys and …, 2018 - Elsevier
Abstract In this paper, Pt/TaSi 2/Ni/Ti/Ni/SiC and Pt/Ti/SiC simultaneous ohmic contacts to n-
type and p-type 4H-SiC are studied. The thermal stability and electrical characteristics of the …
type and p-type 4H-SiC are studied. The thermal stability and electrical characteristics of the …