The increasing demand for higher‐energy‐density batteries driven by advancements in
electric vehicles, hybrid electric vehicles, and portable electronic devices necessitates the …

Silicon (Si) anodes, known for their high capacity, confront obstacles such as volume
expansion, the solid–electrolyte interface (SEI) formation, and limited cyclability, driving …

Despite its real advantages compared to seeded sublimation growth, SiC solution growth
has never given convincing results. The difficulty of stabilizing the growth front, and thus …

The present paper gives an overview of the different routes to grow SiC single crystals. The
focus is put on the new emerging processes compared with the well established ones. A …

Vertically aligned carbon nanotubes (CNTs) grown on plate-like SiC microparticles as
nano/micro hybrid structures were produced by floating catalytic chemical vapor deposition …

The effects of the crystal quality and surface morphology on the electrical properties of MOS
capacitors have been studied in devices manufactured on 3C–SiC epitaxial layers grown on …

In this work, a comprehensive computational fluid dynamics (CFD) investigation to develop
an in‐depth understanding on the fluid flow to obtain a homogenous deposition of MoS2 thin …

The high-quality growth of semiconducting single crystals is the basis of the fabrication of
high-performance devices. SiC is a promising semiconductor material for fabricating power …

We report on the evolution of the electrical and structural properties of Ni/3 C-SiC contacts
during annealing in the temperature range of 600–950 C⁠. A structural analysis showed the …

A novel Monte Carlo kinetic model has been developed and implemented to predict growth
rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on …