N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
N-polar III-nitride transistors
This chapter reviews the historical development and present status of N-polar 000 1¯ GaN
high electron mobility transistors (HEMTs) that aim at addressing the device scaling …
high electron mobility transistors (HEMTs) that aim at addressing the device scaling …
Dielectric modulated enhancement mode N-polar GaN MIS-HEMT biosensor for label free detection
In this paper, an n-polar GaN MIS-HEMT based biosensor is proposed for label-free
detection of various bio-molecules such as uricase, streptavidin, protein, and ChOx …
detection of various bio-molecules such as uricase, streptavidin, protein, and ChOx …
Millimeter-Wave Donor–Acceptor-Doped DpHEMT
AB Pashkovskii, SA Bogdanov… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, we present GaAs millimeter-wave pseudomorphic high-electron-mobility
transistor (pHEMT) using sophisticated AlGaAs-InGaAs-GaAs heterostructure with an In 0.22 …
transistor (pHEMT) using sophisticated AlGaAs-InGaAs-GaAs heterostructure with an In 0.22 …
Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm
In this letter, we demonstrate state-of-the-art performance from N-polar GaN/InAlN metal-
insulator-semiconductor high-electron mobility transistors (MIS-HEMTs). Self-aligned gate …
insulator-semiconductor high-electron mobility transistors (MIS-HEMTs). Self-aligned gate …
Lateral GaN devices for power applications (from kHz to GHz)
GaN and related materials have exploded onto the semiconductor landscape because of the
broad range of applications that they address. The most visible is that it has enabled the …
broad range of applications that they address. The most visible is that it has enabled the …
Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With of 275 GHz
In this letter, we demonstrate state-of-the-art performance from N-polar GaN/AlGaN metal-
insulator-semiconductor high-electron-mobility transistors. Self-aligned gate-first process …
insulator-semiconductor high-electron-mobility transistors. Self-aligned gate-first process …
Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar …
In this paper an enhancement mode (E-mode) short channel N-polar GaN MOS-HEMT is
proposed. In order to mitigate different short channel effects, workfunction engineering …
proposed. In order to mitigate different short channel effects, workfunction engineering …
Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison
An improved small-signal parameter extraction technique for short channel enhancement-
mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional …
mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional …
Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure
K Hotta, Y Tomizuka, K Itagaki, I Makabe… - Japanese Journal of …, 2019 - iopscience.iop.org
The N-polar face of the GaN high electron mobility transistor (HEMT) is capable of forming a
low-resistivity ohmic contact. However, few reports to date describe the process of …
low-resistivity ohmic contact. However, few reports to date describe the process of …