Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures
In this study, the effect of frequency and voltage on the dielectric properties of Al/(CdS-
PVA)/p-Si structures prepared using cadmium sulfide (CdS)-polivinyl alcohol (PVA) interface …
PVA)/p-Si structures prepared using cadmium sulfide (CdS)-polivinyl alcohol (PVA) interface …
Electrical and dielectric characterization of Au/ZnO/n–Si device depending frequency and voltage
Abstract Au/ZnO/n-type Si device is obtained using atomic layer deposition (ALD) for ZnO
layer, and some main electrical parameters are investigated, such as surface/interface state …
layer, and some main electrical parameters are investigated, such as surface/interface state …
Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures
We have studied electrical and dielectric parameters of the Al/ZnS-PVA/p-Si structures using
admittance measurements. For this aim, capacitance/conductance–voltage (C/G–V) …
admittance measurements. For this aim, capacitance/conductance–voltage (C/G–V) …
Investigation on UV photoresponsivity of main electrical properties of Au/CuO-PVA/n-Si MPS type Schottky barrier diodes (SBDs)
GE Demir - Physica B: Condensed Matter, 2021 - Elsevier
In this study,(CuO doped PVA) composite material was deposited using spin coating
technique on n-Si and the Au/CuO-PVA/n-Si Metal/Polymer/Semiconductor type Schottky …
technique on n-Si and the Au/CuO-PVA/n-Si Metal/Polymer/Semiconductor type Schottky …
Temperature-dependent CV characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique
Since the importance of Schottkky devices, Au/ZnO/n-Si device were obtained, and the
capacitance–voltage (CV) and conductance-voltage (GV) characteristics of Au/ZnO/n-Si …
capacitance–voltage (CV) and conductance-voltage (GV) characteristics of Au/ZnO/n-Si …
Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion
Owing to importance of ZnO in electronics, Au/ZnO/n-type Si device was fabricated to
investigate its dielectric properties by aid of capacitance-conductance-voltage …
investigate its dielectric properties by aid of capacitance-conductance-voltage …
Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes
Abstract Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDs) were produced and their
current–voltage (I–V) characteristics were measured in the positive and negative bias …
current–voltage (I–V) characteristics were measured in the positive and negative bias …
Temperature and interfacial layer effects on the electrical and dielectric properties of Al/(CdS-PVA)/p-Si (MPS) structures
In the present study, cadmium sulphide (CdS) nanopowders were prepared by using a
simple physical ball milling technique, and their x-ray diffraction (XRD) analysis confirmed …
simple physical ball milling technique, and their x-ray diffraction (XRD) analysis confirmed …
Investigation of effects on dielectric properties of different do** concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperature
In order to improve and detailedly investigate the dielectric properties of polymer interfaces
of Metal–Polymer–Semiconductor (MPS) structures, three types of MPS were fabricated by …
of Metal–Polymer–Semiconductor (MPS) structures, three types of MPS were fabricated by …
DETERMINATION OF MAIN ELECTRICAL PARAMETERS OF Au–4H-n-SiC (MS) AND Au–Al2O3–4H-n-SiC (MIS) DEVICES
In this study, Au–4H-n-SiC metal–semiconductor (MS) and Au–Al2O3–4H-n-SiC metal–
insulator–semiconductor (MIS) devices were fabricated to examine the effects on the …
insulator–semiconductor (MIS) devices were fabricated to examine the effects on the …