Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …

HfO2, a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

The newly discovered hafnium oxide (HfO 2)-based ferroelectric film shows many
advantages over the traditional perovskite films in the application of information storage …

Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …

Unconventional ferroelectricity in fluorite‐structure oxides enables tremendous opportunities
in nanoelectronics owing to their superior scalability and silicon compatibility. However, their …

Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

This work presents 2-bits/cell operation in deeply scaled ferroelectric finFETs (Fe-finFET)
with a 1 µs write pulse of maximum±5 V amplitude and WRITE endurance above 109 cycles …