REVIEW High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet
light have been obtained through the use of an InGaN active layer instead of a GaN active …

In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Abstract Two-dimensional (2D) nanomaterials have recently attracted considerable attention
due to their promising applications in next-generation electronics and optoelectronics. In …

The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …

Highly efficient light-emitting diodes (LEDs) emitting ultraviolet (UV), blue, green, amber and
red light have been obtained through the use of InGaN active layers instead of GaN active …

In this letter we demonstrate that the anomalously low (002) x‐ray rocking curve widths for
epitaxial hexagonal GaN films on (001) sapphire are a result of a specific threading …

A model to explain the observed low transverse mobility in GaN by scattering of electrons at
charged dislocation lines is proposed. Filled traps along threading dislocation lines act as …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

Epitaxial films having a large lattice mismatch with their substrate invariably form a mosaic
structure of slightly misoriented sub-grains. The mosaic structure is usually characterized by …