The efficiency challenge of nitride light‐emitting diodes for lighting
We discuss the challenges of light‐emitting diodes in view of their application to solid‐state
lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and …
lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and …
Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy
We report on the investigation of an electrically biased high efficiency green III-nitride light-
emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron …
emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron …
[BOEK][B] Handbook of GaN semiconductor materials and devices
This book addresses material growth, device fabrication, device application, and
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
interface engineering for high-efficiency photocathodes
SA Rozhkov, VV Bakin, VS Rusetsky, DA Kustov… - Physical Review …, 2024 - APS
Optical and photoemission measurements were performed on alkali antimonide Na 2 KSb
and Na 2 KSb/Cs x Sb photocathodes in order to determine their energy-band diagrams …
and Na 2 KSb/Cs x Sb photocathodes in order to determine their energy-band diagrams …
Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)
Electron emission spectroscopy was performed on metalorganic chemical vapor deposition
grown pn−-n+ junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] …
grown pn−-n+ junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] …
Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
DJ Myers, AC Espenlaub, K Gelzinyte… - Applied Physics …, 2020 - pubs.aip.org
We report on the direct measurement of hot electrons generated in the active region of blue
light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission …
light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission …
A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to
replace the bulky and fragile photomultiplier tube (PMT) for weak light detection. However …
replace the bulky and fragile photomultiplier tube (PMT) for weak light detection. However …
Electron Transport Properties of Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations
High-electron-mobility transistors (HEMTs) based on Al x Ga 1− x N/Ga N heterostructures
have great potential for applications in power electronics and radio frequency applications …
have great potential for applications in power electronics and radio frequency applications …
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence …
W Hahn, JM Lentali, P Polovodov, N Young… - Physical Review B, 2018 - APS
We present direct experimental evidence of Anderson localization induced by the intrinsic
alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the …
alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the …
Origin of electrons emitted into vacuum from InGaN light emitting diodes
The mechanism responsible for efficiency droop in InGaN light-emitting diodes (LEDs) has
long been elusive due to indirect measurement techniques used for its identification. Auger …
long been elusive due to indirect measurement techniques used for its identification. Auger …