Vertical gate-all-around (GAA) junctionless nanowire transistors (JNTs) with different
diameters and underlap lengths are investigated using three-dimensional device …

For sub-20-nm FinFET and nanowire (NW) complementary metal-oxide semiconductor
(CMOS) devices, negative bias temperature instability (NBTI) is an important reliability issue …

The present work investigates key attributes of metal–ferroelectric–metal–insulator–
semiconductor (MFMIS) cylindrical nanowire (NW) transistor through a physics-based …

The continuous scaling of gate length as well as source and drain (S/D) area increases the
parasitic S/D series resistance and decreases the channel resistance. As a result, the …

Reducing parasitics is expected to be a major knob for the CMOS performance promotion of
ultrascaled nanosheet (NS) FETs. This article presents a novel modeling and simulation …

In this paper, we propose an optimized design for Si-nanowire FETs in terms of spacer
dielectric constant (κ sp), extension length (L EXT), nanowire diameter (D nw), and operation …

In this paper, we analyze stability metrics [eg, read, write noise margins (WNM), and access
time], geometrical variability, and layout area optimization of silicon nanowire field effect …

With the shrinking device geometries, the extremely high electric field in the drain-channel
region makes nano-devices more susceptible to Hot Carrier induced Degradation (HCD) …

In this work, negative bias temperature instability/positive bias temperature instability
(NBTI/PBTI) reliability model for p/n-silicon nanowire (SiNW) MOSFETs is obtained from …

Abstract Effects of using asymmetric channel thickness in tunneling field-effect transistors
(TFET) are investigated in sub-50 nm channel regime using two-dimensional (2D) …