This study examines the effect of the annealing time of the Y2O3 passivation layer on the
electrical performances and bias stabilities of sol–gel-deposited SnO2 thin-film transistors …

Herein, a new combination of high-performance and bias-stress-stable SnO 2 thin-film
transistors (TFTs) with Y 2 O 3 passivation layers is introduced. The Y 2 O 3 layers on SnO 2 …

Low-cost inorganic solution processing for oxide semiconductor thin-film transistors (TFTs) is
crucial for develo** next-generation cost-effective, ubiquitous, and flexible electronics …

This book discusses various aspects of different bulk TSO single crystals in terms of
thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution …

Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process.
The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel …

This study investigates the performance of SnO2 thin-film transistors (TFTs) fabricated with
vertically controlled carrier concentrations using a sol–gel method. In the proposed …

The atmospheric pressure solvothermal (APS) synthesis of nanocrystalline SnO2 (average
size of coherent scattering regions (CSR)—7.5±0.6 nm) using tin acetylacetonate as a …

Fast and reliable semiconductor hydrogen sensors are crucially important for the large-scale
utilization of hydrogen energy. One major challenge that hinders their practical application is …

Erbium doped tin-oxide thin film transistors (ErSnO-TFTs) were fabricated by Radio-
Frequency magnetron sputtering (RFMS) using SnO target and Er foil. Effects of Er …

In direct borohydride fuel cell (DBFC), there is a contradiction between catalytic activity and
specific discharge capacity (SDC) owing to the dual catalytic effects of most anode catalysts …