Power electronics belongs to the future key technologies in order to increase system
efficiency as well as performance in automotive and energy saving applications. Silicon is …

Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power
electronics due to their superior electrical energy efficiencies and improved power densities …

The presence of extended bi-dimensional defects is one of the key issues that hinder the
use of wide band-gap materials hetero-epitaxially grown on silicon. In this work, we …

Metal-oxide-semiconductor (MOS) capacitors with Al2O3 as a gate insulator are fabricated
on cubic silicon carbide (3C-SiC). Al2O3 is deposited both by thermal and plasma …

Nanocrystalline silicon carbide (3C-SiC) has been irradiated by neutrons (2× 10 13 n⋅ cm−
2 s− 1) up to 20 hours. Paramagnetic centers and their nature have been investigated …

We present a study for large defects called protrusions that form during the hetero-epitaxy of
SiC on Si. We focus first on surface morphology, size, three-dimensional shape and internal …

We have developed a transfer process of 3C-SiC-on-Si (1 0 0) seeding layers grown by
chemical vapor deposition onto a poly-or single-crystalline SiC carrier. Applying subsequent …

In this work an extended study of the carbonization process of the silicon surface and of a
low temperature transition layer in the temperature rump on the 3C-SiC epitaxial growth has …

This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-
SiC) layers grown on silicon substrates. In particular, the morphological, electrical and …

The interfacial electrical properties of deposited oxide (SiO 2) onto cubic silicon carbide (3C-
SiC) were investigated after different post-oxide deposition annealing (PDA) by means of …