Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

Comprehensive variability analysis in dual-port fefet for reliable multi-level-cell storage

S Chatterjee, S Thomann, K Ni… - … on Electron Devices, 2022 - ieeexplore.ieee.org
HfO 2-based FeFET is a remarkably promising candidate among emerging memory
technologies. Its manifold applications range from nonvolatile memory to neuromorphic …

Multilevel operation of ferroelectric fet memory arrays considering current percolation paths impacting switching behavior

F Müller, S De, R Olivo, M Lederer… - IEEE Electron …, 2023 - ieeexplore.ieee.org
This letter reports multi-level-cell (MLC) operation of ferroelectric FETs (FeFET) arranged in
AND-connected memory arrays with a bit-error rate (BER) of 4% when writing a random data …

Hdgim: Hyperdimensional genome sequence matching on unreliable highly scaled fefet

HE Barkam, S Yun, PR Genssler, Z Zou… - … , Automation & Test …, 2023 - ieeexplore.ieee.org
This is the first work to present a reliable application for highly scaled (down to merely 3nm),
multi-bit Ferroelectric FET (FeFET) technology. FeFET is one of the up-and-coming …

FeFET reliability modeling for in-memory computing: Challenges, perspective, and emerging trends

S Thomann, H Amrouch - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
Ferroelectric FET (FeFET) is a singularly attractive emerging technology with a rich feature
set. Boasting high versatility, it has already been implemented in a host of applications, like …

Reliable hyperdimensional reasoning on unreliable emerging technologies

HE Barkam, S Yun, H Chen, P Gensler… - 2023 IEEE/ACM …, 2023 - ieeexplore.ieee.org
While Graph Neural Networks (GNNs) have demonstrated remarkable achievements in
knowledge graph reasoning, their computational efficiency on conventional computing …

Cross-layer reliability modeling of dual-port fefet: Device-algorithm interaction

S Kumar, S Chatterjee, S Thomann… - … on Circuits and …, 2023 - ieeexplore.ieee.org
The Ferroelectric Field-Effect Transistor (FeFET) is an emerging Non-Volatile Memory (NVM)
technology enabling novel data-centric architectures that go far beyond von Neumann …

Comprehensive modeling of switching behavior in beol fefet for monolithic 3-d integration

S Kumar, S Thomann, O Prakash, K Ni… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this article, we have developed a comprehensive modeling framework to explain the
switching characteristics of BEOL-compatible ferroelectric field-effect transistor (FeFET) with …

Effect of floating gate insertion on the analog states of ferroelectric field-effect transistors

S Lee, Y Lee, G Kim, T Kim, T Eom… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, we propose a structural approach to mitigate device-to-device variation and
performance degradation of ferroelectric (FE) field-effect transistors (FeFETs) due to the …

Cross-layer fefet reliability modeling for robust hyperdimensional computing

S Kumar, S Chatterjee, S Thomann… - 2022 IFIP/IEEE 30th …, 2022 - ieeexplore.ieee.org
Hyperdimensional computing (HDC) is an emerging learning paradigm that has gained a lot
of attention due to its ability to train with fewer data, lightweight implementation, and …