Mid-infrared semiconductor lasers: a review
The mid-infrared (MIR) wavelength range of the electromagnetic spectrum offers a number
of applications of growing importance such as photonic sensors for environment, industry or …
of applications of growing importance such as photonic sensors for environment, industry or …
Theory of multiple-stage interband photovoltaic devices and ultimate performance limit comparison of multiple-stage and single-stage interband infrared detectors
RT Hinkey, RQ Yang - Journal of Applied Physics, 2013 - pubs.aip.org
A theoretical framework for studying signal and noise in multiple-stage interband infrared
photovoltaic devices is presented. The theory flows from a general picture of electrons …
photovoltaic devices is presented. The theory flows from a general picture of electrons …
Strain-compensated (Ga, In) N/(Al, Ga) N/GaN multiple quantum wells for improved yellow/amber light emission
Yellow/amber (570–600 nm) emitting In x Ga 1− x N/Al y Ga 1− y N/GaN multiple quantum
wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on …
wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on …
Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb
The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a
two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can …
two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can …
Midwavelength interband cascade infrared photodetectors with superlattice absorbers and gain
We report on a comparison study of the electrical and optical properties of a set of device
structures with different numbers of cascade stages, type-II superlattice (T2SL) absorber …
structures with different numbers of cascade stages, type-II superlattice (T2SL) absorber …
Investigating the physics of higher-order optical transitions in InAs/GaSb superlattices
We present an optical spectroscopy analysis of the molecular beam epitaxy-grown
InAs/GaSb quantum systems to study the higher-order optical transitions in InAs/GaSb …
InAs/GaSb quantum systems to study the higher-order optical transitions in InAs/GaSb …
Characterization of midwave infrared InAs/GaSb superlattice photodiode
C Cervera, JB Rodriguez, R Chaghi… - Journal of Applied …, 2009 - pubs.aip.org
We report on structural, electrical, and optical characterizations of midwave infrared
InAs/GaSb superlattice (SL) pin photodiodes. High-quality SL samples, with 1 μ m thick …
InAs/GaSb superlattice (SL) pin photodiodes. High-quality SL samples, with 1 μ m thick …
Dark current and noise measurements of an InAs/GaSb superlattice photodiode operating in the midwave infrared domain
C Cervera, I Ribet-Mohamed, R Taalat… - Journal of electronic …, 2012 - Springer
A midwave infrared pin photodiode based on a type II InAs/GaSb superlattice (SL) was
fabricated, and electrical measurements under dark conditions were performed as a function …
fabricated, and electrical measurements under dark conditions were performed as a function …
Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window
and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength …
and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength …
Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼ 8 μm) infrared detection
Optimization of various growth parameters for type-II 13 MLs InAs/7 MLs GaSb strained layer
superlattices (SLSs)(λcut-off∼ 8μm at 300K), grown by solid source molecular beam …
superlattices (SLSs)(λcut-off∼ 8μm at 300K), grown by solid source molecular beam …