Ferroelectric domain walls for nanotechnology

D Meier, SM Selbach - Nature Reviews Materials, 2022 - nature.com
Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials

GF Nataf, M Guennou, JM Gregg, D Meier… - Nature Reviews …, 2020 - nature.com
Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

Thin-film ferroelectric materials and their applications

LW Martin, AM Rappe - Nature Reviews Materials, 2016 - nature.com
Ferroelectric materials, because of their robust spontaneous electrical polarization, are
widely used in various applications. Recent advances in modelling, synthesis and …

Controllable electrical, magnetoelectric and optical properties of BiFeO3 via domain engineering

Y Liu, Y Wang, J Ma, S Li, H Pan, CW Nan… - Progress in Materials …, 2022 - Elsevier
Abstract Bismuth ferrite (BiFeO 3, BFO) as one of the few single-phase room-temperature
multiferroics, has aroused ever-increasing enthusiasm in research communities during the …

Multiferroic bismuth ferrite-based materials for multifunctional applications: Ceramic bulks, thin films and nanostructures

J Wu, Z Fan, D **ao, J Zhu, J Wang - Progress in Materials Science, 2016 - Elsevier
Among the different types of multiferroic compounds, bismuth ferrite (BiFeO 3; BFO) stands
out because it is perhaps the only one being simultaneously magnetic and strongly …

Nonvolatile ferroelectric domain wall memory

P Sharma, Q Zhang, D Sando, CH Lei, Y Liu, J Li… - Science …, 2017 - science.org
Ferroelectric domain walls are atomically sharp topological defects that separate regions of
uniform polarization. The discovery of electrical conductivity in specific types of walls gave …

Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects

T Rojac, A Bencan, G Drazic, N Sakamoto, H Ursic… - Nature materials, 2017 - nature.com
Mobile charged defects, accumulated in the domain-wall region to screen polarization
charges, have been proposed as the origin of the electrical conductivity at domain walls in …

Thin‐film ferroelectrics

A Fernandez, M Acharya, HG Lee, J Schimpf… - Advanced …, 2022 - Wiley Online Library
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Domain wall nanoelectronics

G Catalan, J Seidel, R Ramesh, JF Scott - Reviews of Modern Physics, 2012 - APS
Domains in ferroelectrics were considered to be well understood by the middle of the last
century: They were generally rectilinear, and their walls were Ising-like. Their simplicity …

[HTML][HTML] Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

RK Vasudevan, N Balke, P Maksymovych… - Applied Physics …, 2017 - pubs.aip.org
Ferroelectric materials have remained one of the major focal points of condensed matter
physics and materials science for over 50 years. In the last 20 years, the development of …