Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Quantum conductance in memristive devices: fundamentals, developments, and applications

G Milano, M Aono, L Boarino, U Celano… - Advanced …, 2022 - Wiley Online Library
Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …

Thousands of conductance levels in memristors integrated on CMOS

M Rao, H Tang, J Wu, W Song, M Zhang, W Yin… - Nature, 2023 - nature.com
Neural networks based on memristive devices,–have the ability to improve throughput and
energy efficiency for machine learning, and artificial intelligence, especially in edge …

[HTML][HTML] Advanced composite materials utilized in FDM/FFF 3D printing manufacturing processes: the case of filled filaments

A Kantaros, E Soulis, FIT Petrescu, T Ganetsos - Materials, 2023 - mdpi.com
The emergence of additive manufacturing technologies has brought about a significant
transformation in several industries. Among these technologies, Fused Deposition …

Nonvolatile memory materials for neuromorphic intelligent machines

DS Jeong, CS Hwang - Advanced Materials, 2018 - Wiley Online Library
Recent progress in deep learning extends the capability of artificial intelligence to various
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …

Neuromorphic nanoionics for human–machine interaction: From materials to applications

X Liu, C Sun, X Ye, X Zhu, C Hu, H Tan, S He… - Advanced …, 2024 - Wiley Online Library
Human–machine interaction (HMI) technology has undergone significant advancements in
recent years, enabling seamless communication between humans and machines. Its …

Dielectric breakdown of oxide films in electronic devices

A Padovani, P La Torraca, J Strand, L Larcher… - Nature Reviews …, 2024 - nature.com
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

Physics of the switching kinetics in resistive memories

S Menzel, U Böttger, M Wimmer… - Advanced functional …, 2015 - Wiley Online Library
Memristive cells based on different physical effects, that is, phase change, valence change,
and electrochemical processes, are discussed with respect to their potential to overcome the …

[PDF][PDF] Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory

S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long… - Adv. Mater, 2016 - academia.edu
DOI: 10.1002/adma. 201603293 formation and dissolution in the negative-RESET process,
which may cause the device reliability issues, ie, programming failure. Although the dynamic …

Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device

D Liu, Q Lin, Z Zang, M Wang… - … applied materials & …, 2017 - ACS Publications
All-inorganic perovskite CsPbX3 (X= Cl, Br, or I) is widely used in a variety of photoelectric
devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However …