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Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Quantum conductance in memristive devices: fundamentals, developments, and applications
Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …
breakthrough for the development of new information processing technologies based on …
Thousands of conductance levels in memristors integrated on CMOS
Neural networks based on memristive devices,–have the ability to improve throughput and
energy efficiency for machine learning, and artificial intelligence, especially in edge …
energy efficiency for machine learning, and artificial intelligence, especially in edge …
[HTML][HTML] Advanced composite materials utilized in FDM/FFF 3D printing manufacturing processes: the case of filled filaments
The emergence of additive manufacturing technologies has brought about a significant
transformation in several industries. Among these technologies, Fused Deposition …
transformation in several industries. Among these technologies, Fused Deposition …
Nonvolatile memory materials for neuromorphic intelligent machines
Recent progress in deep learning extends the capability of artificial intelligence to various
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …
Neuromorphic nanoionics for human–machine interaction: From materials to applications
Human–machine interaction (HMI) technology has undergone significant advancements in
recent years, enabling seamless communication between humans and machines. Its …
recent years, enabling seamless communication between humans and machines. Its …
Dielectric breakdown of oxide films in electronic devices
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
Physics of the switching kinetics in resistive memories
S Menzel, U Böttger, M Wimmer… - Advanced functional …, 2015 - Wiley Online Library
Memristive cells based on different physical effects, that is, phase change, valence change,
and electrochemical processes, are discussed with respect to their potential to overcome the …
and electrochemical processes, are discussed with respect to their potential to overcome the …
[PDF][PDF] Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory
DOI: 10.1002/adma. 201603293 formation and dissolution in the negative-RESET process,
which may cause the device reliability issues, ie, programming failure. Although the dynamic …
which may cause the device reliability issues, ie, programming failure. Although the dynamic …
Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device
All-inorganic perovskite CsPbX3 (X= Cl, Br, or I) is widely used in a variety of photoelectric
devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However …
devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However …