The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown
outstanding properties, which has led to their successful use for a long time in optical …

Phase-change memory technology relies on the electrical and optical properties of certain
materials changing substantially when the atomic structure of the material is altered by …

Phase change materials are materials that exist in at least two structurally distinct solid
phases, an amorphous and one (or more) crystalline phases. Many materials display phase …

Phase‐change materials can rapidly and reversibly be switched between an amorphous
and a crystalline phase. Since both phases are characterized by very different optical and …

GeTe is a prototypical phase change material of high interest for applications in optical and
electronic nonvolatile memories. We present an interatomic potential for the bulk phases of …

We computed the Raman spectrum of amorphous GeTe by ab initio simulations and
empirical bond polarizability models. The calculated spectrum is in very good agreement …

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge
carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves …

The 3D integration technology in semiconductor fabrication requires a key component, the
ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped …

We present a molecular dynamics simulation study of CH3NH3PbI3 based on forces
calculated from density functional theory. The simulations were performed on model systems …