Thin film forming method
Y Kim, Y Kim - US Patent 12,025,484, 2024 - Google Patents
A thin film forming method includes: a first operation of supplying a source gas at a first flow
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
Sequential infiltration synthesis apparatus
IJ Raaijmakers, JW Maes, W Knaepen… - US Patent …, 2023 - Google Patents
2017-02-28 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
JW Maes, W Knaepen, KK Kachel… - US Patent …, 2022 - Google Patents
A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and
arranged to hold at least a first substrate; a precursor distribution and removal system to …
arranged to hold at least a first substrate; a precursor distribution and removal system to …
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
2020-11-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Layer forming method and apparatus
A Klaver, W Knaepen, L Jdira, G Van Der Star… - US Patent …, 2023 - Google Patents
There is provided a method and apparatus for forming a layer, by sequentially repeating a
layer deposition cycle to process a substrate disposed in a reaction chamber. The …
layer deposition cycle to process a substrate disposed in a reaction chamber. The …
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
EJ Shero, RB Milligan, WG Petro, E Wang… - US Patent …, 2022 - Google Patents
2022-03-29 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Substrate processing apparatus for processing substrates
J Fluit - US Patent 12,040,199, 2024 - Google Patents
The disclosure relates to substrate processing apparatus, with a first and second reactor,
each reactor configured with an elevator to transfer a boat with substrates to the reactor. The …
each reactor configured with an elevator to transfer a boat with substrates to the reactor. The …
Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
S Rajavelu, J Tolle, R McCartney - US Patent 12,040,200, 2024 - Google Patents
A semiconductor processing apparatus is disclosed that may include a reaction chamber
joined by an upstream inlet flange and a downstream outlet flange wherein a longitudinal …
joined by an upstream inlet flange and a downstream outlet flange wherein a longitudinal …
Deposition of charge trap** layers
P Calka, Q **e, D Pierreux, B Jongbloed - US Patent 11,532,757, 2022 - Google Patents
2022-08-31 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
A Fukazawa, H Fukuda - US Patent 11,453,943, 2022 - Google Patents
An oxide or nitride film containing carbon and at least one of silicon and metal is formed by
ALD conducting one or more process cycles, each process cycle including: feeding a first …
ALD conducting one or more process cycles, each process cycle including: feeding a first …