Novel silicon-controlled rectifier (SCR) for high-voltage electrostatic discharge (ESD) applications

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A new high holding voltage dual-direction SCR with optimized segmented topology

X Huang, JJ Liou, Z Liu, F Liu, J Liu… - IEEE Electron Device …, 2016 - ieeexplore.ieee.org
While silicon controlled rectifiers (SCRs) are highly robust electrostatic discharge (ESD)
protection devices, they typically are not suited for high-voltage ESD protection due to their …
Lagre Referanse Sitert av 71 Beslektede artikler Alle 3 versjoner

A novel dual-directional SCR structure with high holding voltage for 12-V applications in 0.13-μm BCD process

KI Do, BB Song, YS Koo - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
This article proposes a dual-directional silicon-controlled rectifier (SCR) with a novel
structure and high holding voltage to improve the electrostatic discharge (ESD) design area …
Lagre Referanse Sitert av 31 Beslektede artikler Alle 3 versjoner

Gate-controlled LVTSCR for high-voltage ESD protections in advanced CMOS processes

R Chen, H Liu, C Yan, F Du, A Han… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this article, a novel high robust and latch-up immune electrostatic discharge (ESD)
protection device, called gate-controlled low-voltage-triggered silicon-controlled rectifier (GC …
Lagre Referanse Sitert av 10 Beslektede artikler Alle 2 versjoner

A novel segmented LDMOS-SCR structure with 8-kV HBM ESD robustness in CMOS analog multiplexer

L Qian, M Li, Y Wang, H Wu, T Liu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
A novel segmented laterally diffused MOS embedded silicon-controlled rectifier (SCR)
structure, called NSLDMOS-SCR, is proposed and verified in an optimal 5-V/40-V bipolar …
Lagre Referanse Sitert av 13 Beslektede artikler Alle 3 versjoner

Silicon-controlled rectifier stacking structure for high-voltage ESD protection applications

Z Liu, JJ Liou, S Dong, Y Han - IEEE Electron Device Letters, 2010 - ieeexplore.ieee.org
Latchup immunity is a challenging issue for the design of power supply clamps used in high-
voltage electrostatic discharge (ESD) protection applications. While silicon-controlled …
Lagre Referanse Sitert av 70 Beslektede artikler Alle 5 versjoner

High holding voltage SCR-LDMOS stacking structure with ring-resistance-triggered technique

F Ma, B Zhang, Y Han, J Zheng, B Song… - IEEE Electron …, 2013 - ieeexplore.ieee.org
A novel ring-resistance-triggered stacked SCR-laterally diffused MOSs has been
successfully verified in a 0.35 μm, 30-V/5-V bipolar CMOS DMOS process to solve the …
Lagre Referanse Sitert av 58 Beslektede artikler Alle 4 versjoner

An enhanced MLSCR structure suitable for ESD protection in advanced epitaxial CMOS technology

F Du, F Hou, W Song, R Chen, J Liu… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
In this paper, an enhanced modified lateral silicon-controlled rectifier (EMLSCR) has been
proposed and demonstrated. Compared with the traditional MLSCR, the EMLSCR …
Lagre Referanse Sitert av 30 Beslektede artikler Alle 3 versjoner

Robust silicon-controlled rectifier with high-holding voltage for on-chip electrostatic protection

W Song, R Chen, Z Tong, F Hou, F Du… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this article, a robust high-holding voltage silicon-controlled rectifier (HHSCR) is
implemented and realized in a 0.18-BCD process for on-chip electrostatic discharge (ESD) …
Lagre Referanse Sitert av 13 Beslektede artikler Alle 2 versjoner
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4H-SiC-based ESD protection design with optimization of segmented LIGBT for high-voltage applications

KI Do, SH **, BS Lee, YS Koo - IEEE Journal of the Electron …, 2021 - ieeexplore.ieee.org
4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and
high operating voltage. These characteristics can provide high electrostatic discharge (ESD) …
Lagre Referanse Sitert av 14 Beslektede artikler Alle 2 versjoner

An enhanced gate-grounded NMOSFET for robust ESD applications

F Du, S Song, F Hou, W Song, L Chen… - IEEE electron device …, 2019 - ieeexplore.ieee.org
Gate-grounded n-channel MOSFET (GGNMOS) has been widely used in electrostatic
discharge (ESD) protection applications. In this letter, an enhanced GGNMOS, called the …
Lagre Referanse Sitert av 24 Beslektede artikler Alle 3 versjoner