Complex oxide interfaces have mesmerized the scientific community in the last decade due
to the possibility of creating tunable novel multifunctionalities, which are possible owing to …

Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …

We discuss electronic and ionic defect concentration profiles at the conducting interface
between the two wide-band-gap insulators LaAlO 3 and SrTiO 3 (STO). The profiles are …

Charge‐transfer phenomena at heterointerfaces are a promising pathway to engineer
functionalities absent in bulk materials but can also lead to degraded properties in ultrathin …

Electrolyte gating is a powerful means for tuning the carrier density and exploring the
resultant modulation of novel properties on solid surfaces. However, the mechanism …

Resistance modulation of 2D electron gas (2DEG) at oxide heterointerfaces has recently
attracted extensive interests in nonvolatile memory and various sensors. Specially …

Two-dimensional electron gas (2DEG) with high electron mobility is highly desired to study
the emergent properties and to enhance future device performance. Here we report the …

The observation of magnetic interaction at the interface between nonmagnetic oxides has
attracted much attention in recent years. In this report, we show that the Kondo-like …

Cadmium (Cd) is vital in industry, but its toxicity poses a threat to the environment. Hence, it
is imperative to investigate reusable cadmium adsorption materials at ambient temperature …

The formation mechanism of 2-dimensional electron gases (2DEGs) at heterointerfaces
between nominally insulating oxides is addressed with a thermodynamical approach. We …