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[HTML][HTML] Advancements in Free-Standing Ferroelectric Films: Paving the Way for Transparent Flexible Electronics
Free-standing ferroelectric films have emerged as a transformative technology in the field of
flexible electronics, offering unique properties that enable a wide range of applications …
flexible electronics, offering unique properties that enable a wide range of applications …
Influence of chemical composition and mechanical strain on the ferroelectricity of freestanding Hf1-xZrxO2 membranes
Y Guan, X Wang, F Yan, M Meng, S Ning… - Materials Science and …, 2025 - Elsevier
Abstract Freestanding Hf 1-x Zr x O 2 (HZO) membranes have received considerable
attention for their potential in flexible electronics applications. The relaxation of substrate …
attention for their potential in flexible electronics applications. The relaxation of substrate …
On the thickness scaling of ferroelectric hafnia
The discovery of ferroelectricity in hafnia has revolutionized the field and brought industry
applications closer than ever. One of the most interesting aspects of hafnia compared to …
applications closer than ever. One of the most interesting aspects of hafnia compared to …
Ultrathin freestanding membranes of with metastable structures and strain-dependent electrical properties
Fabricating and investigating freestanding membranes of materials are key approaches for
exploring the intrinsic properties of those materials, even in their metastable phases …
exploring the intrinsic properties of those materials, even in their metastable phases …
Thickness-Dependent Ferroelectric and Piezoelectric Characterization of HfxZr1-xO Nanofilms and Properties Analysis Using FEM
H Lyu, Z Liu, W Yang, H Zhong, Z Wang… - … Measurement on the …, 2024 - ieeexplore.ieee.org
As electronic devices continue to advance towards higher integration and smaller sizes, Hf x
Zr 1-x O 2 thin films have become the choice for new nano-device applications due to their …
Zr 1-x O 2 thin films have become the choice for new nano-device applications due to their …
[CITARE][C] HfZrOx 기반 강유전체 터널 접합의 소자 설계 및 최적화와 뉴로모픽 엔지니어링
서은초， 김성준 - 대한전자공학회 학술대회, 2024 - dbpia.co.kr
HfZrOx 기반 강유전체 터널 접합의 소자 설계 및 최적화와 뉴로모픽 엔지니어링 Page 1 HfZrOx
기반 강유전체 터널 접합의 소자 설계 및 최적화와 뉴로모픽 엔지니어링 서은초, 김성준 동국대 …
기반 강유전체 터널 접합의 소자 설계 및 최적화와 뉴로모픽 엔지니어링 서은초, 김성준 동국대 …