Non-damaging growth and band alignment of p-type NiO/β-Ga 2 O 3 heterojunction diodes for high power applications

JY Min, M Labed, CV Prasad, JY Hong… - Journal of Materials …, 2024 - pubs.rsc.org
This work fabricated NiO/β-Ga2O3 heterojunctions deposited using confined magnetic field-
based sputtering at different oxygen flow rates and compared these with a Schottky barrier …

Advanced nano-texture, optical bandgap, and Urbach energy analysis of NiO/Si heterojunctions

L Dejam, J Sabbaghzadeh, A Ghaderi, S Solaymani… - Scientific Reports, 2023 - nature.com
Due to the large number of industrial applications of transparent conductive oxides (TCOs),
this study focuses on one of the most important metal oxides. The RF-magnetron sputtering …

Room temperature RF magnetron sputtered nanocrystalline NiO thin films for highly responsive and selective H2S gas sensing at low ppm concentrations

S Srivastava, AK Gangwar, A Kumar, G Gupta… - Materials Research …, 2023 - Elsevier
We report on the H 2 S gas sensing performance of nanocrystalline NiO thin films sputtered
on alumina substrate via RF magnetron sputtering using NiO target at room temperature …

[HTML][HTML] Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3

JS Li, X **a, CC Chiang, DC Hays, BP Gila… - Journal of Vacuum …, 2023 - pubs.aip.org
The characteristics of sputtered NiO for use in pn heterojunctions with Ga 2 O 3 were
investigated as a function of sputtering parameters and postdeposition annealing …

Effect of annealing on structural, optical and electrical properties of nickel oxide thin films synthesized by the reactive radio frequency sputtering

S Elmassi, A Narjis, L Nkhaili, A Elkissani… - Physica B: Condensed …, 2022 - Elsevier
In this paper, Nickel oxide (NiO) thin films were synthesized by the reactive radio frequency
sputtering. NiO thin films were annealed at different temperatures (350, 400, 450 and 500° …

Optoelectronic properties of p-type NiO films deposited by direct current magnetron sputtering versus high power impulse magnetron sputtering

SC Chen, TY Kuo, HC Lin, RZ Chen, H Sun - Applied Surface Science, 2020 - Elsevier
High power impulse magnetron sputtering (HiPIMS) technology has attracted lots of
attention due to its high target ionization rate. This characteristic is desirable in preparing …

Effect of annealing temperature on the optoelectronic properties and structure of NiO films

MC Li, MJ Dai, SS Lin, SC Chen, J Xu, XL Liu… - Ceramics …, 2022 - Elsevier
Nickel oxide (NiO) is a typical transparent conductive oxide with intrinsic p-type conductivity.
In this study, NiO thin films were prepared by magnetron sputtering and then subject to rapid …

Synthesis of high purity nickel oxide by a modified sol-gel method

D Mateos, B Valdez, JR Castillo, N Nedev, M Curiel… - Ceramics …, 2019 - Elsevier
Nickel oxide (NiO) powder was synthesized by a modified sol-gel method using nickel
acetate, citric acid and ethylene glycol as precursors. The synthesized material was …

Transparency and p-Type conductivity of BeSe doped with group VA atoms: a hybrid functional study

SW Fan, Y Chen, L Yang - The Journal of Physical Chemistry C, 2022 - ACS Publications
Utilizing a hybrid functional method, the transparency and p-type conductivity of BeSe are
investigated. Our studies confirm that N-and P-substituted Se (labeled as NSe and PSe) are …

Effect of RF power on structural, optical and electrical properties of sputtered nickel oxide

S Elmassi, M Bousseta, L Amiri, S Drissi, A Abali… - Physica B: Condensed …, 2023 - Elsevier
In this study, we focus on the effect of the radio frequency (RF) sputtering power on the
structural, optical and electrical properties of NiO thin films, deposited on glass substrates in …