Review of Ge (GeSn) and InGaAs avalanche diodes operating in the SWIR spectral region
Y Miao, H Lin, B Li, T Dong, C He, J Du, X Zhao, Z Zhou… - Nanomaterials, 2023 - mdpi.com
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …
Strained germanium gate-all-around PMOS device demonstration using selective wire release etch prior to replacement metal gate deposition
L Witters, H Arimura, F Sebaai… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
Strained Ge p-channel gate-all-around (GAA) devices with Si-passivation are demonstrated
on high-density 45-nm active pitch starting from 300-mm SiGe strain relaxed buffer wafers …
on high-density 45-nm active pitch starting from 300-mm SiGe strain relaxed buffer wafers …
Reduced pressure CVD growth of Ge and Ge1− xSnx alloys
The epitaxial growth of Ge and GeSn alloys on Si (100) by Reduced Pressure Chemical
Vapor Deposition is discussed. Particular emphasis is placed on the growth kinetics in the …
Vapor Deposition is discussed. Particular emphasis is placed on the growth kinetics in the …
Ge1-xSnx materials: Challenges and applications
Ge 1-x Sn x is receiving a growing interest in the semiconductor community as the material
properties are interesting for both electrical and optical device applications. In this …
properties are interesting for both electrical and optical device applications. In this …
15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
J Mitard, L Witters, R Loo, SH Lee… - 2014 Symposium on …, 2014 - ieeexplore.ieee.org
An STI-last integration scheme was successfully developed to fabricate low-defectivity and
dopant-controlled SiGe SRB/sGe Fins. For the first time, 15 nm fin-width SiGe SRB/highly …
dopant-controlled SiGe SRB/sGe Fins. For the first time, 15 nm fin-width SiGe SRB/highly …
[HTML][HTML] Compressively strained epitaxial Ge layers for quantum computing applications
The epitaxial growth of a strained Ge layer, which is a promising candidate for the channel
material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using …
material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using …
Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers
G Kozlowski, O Fursenko, P Zaumseil… - ECS …, 2013 - iopscience.iop.org
We report on the structural characterization of state-of-the-art SiGe graded buffers on Si
(001) substrates with a diameter of 300 mm with and without a backside stressor. The main …
(001) substrates with a diameter of 300 mm with and without a backside stressor. The main …
Selective growth of strained Ge channel on relaxed SiGe buffer in shallow trench isolation for high mobility Ge planar and FIN p-FET
Strained Ge channels on SiGe strain relaxed buffer are grown selectively in active areas
surrounded by Shallow Trench Isolations. Using advanced Reduced Pressure Chemical …
surrounded by Shallow Trench Isolations. Using advanced Reduced Pressure Chemical …
Off-axis Raman spectroscopy for nanoscale stress metrology
Raman spectroscopy is an effective tool for stress and compositional metrology in the
semiconductor industry. However, its application toward decoupling a complex stress state …
semiconductor industry. However, its application toward decoupling a complex stress state …
Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures
The performance of heterogeneous 3D transistor structures critically depends on the
composition and strain state of the buffer, channel and source/drain regions. In this paper we …
composition and strain state of the buffer, channel and source/drain regions. In this paper we …