Review of Ge (GeSn) and InGaAs avalanche diodes operating in the SWIR spectral region

Y Miao, H Lin, B Li, T Dong, C He, J Du, X Zhao, Z Zhou… - Nanomaterials, 2023 - mdpi.com
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …

Strained germanium gate-all-around PMOS device demonstration using selective wire release etch prior to replacement metal gate deposition

L Witters, H Arimura, F Sebaai… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
Strained Ge p-channel gate-all-around (GAA) devices with Si-passivation are demonstrated
on high-density 45-nm active pitch starting from 300-mm SiGe strain relaxed buffer wafers …

Reduced pressure CVD growth of Ge and Ge1− xSnx alloys

S Wirths, D Buca, G Mussler… - ECS Journal of Solid …, 2013 - iopscience.iop.org
The epitaxial growth of Ge and GeSn alloys on Si (100) by Reduced Pressure Chemical
Vapor Deposition is discussed. Particular emphasis is placed on the growth kinetics in the …

Ge1-xSnx materials: Challenges and applications

R Loo, B Vincent, F Gencarelli… - ECS Journal of Solid …, 2012 - iopscience.iop.org
Ge 1-x Sn x is receiving a growing interest in the semiconductor community as the material
properties are interesting for both electrical and optical device applications. In this …

15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process

J Mitard, L Witters, R Loo, SH Lee… - 2014 Symposium on …, 2014 - ieeexplore.ieee.org
An STI-last integration scheme was successfully developed to fabricate low-defectivity and
dopant-controlled SiGe SRB/sGe Fins. For the first time, 15 nm fin-width SiGe SRB/highly …

[HTML][HTML] Compressively strained epitaxial Ge layers for quantum computing applications

Y Shimura, C Godfrin, A Hikavyy, R Li, J Aguilera… - Materials Science in …, 2024 - Elsevier
The epitaxial growth of a strained Ge layer, which is a promising candidate for the channel
material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using …

Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers

G Kozlowski, O Fursenko, P Zaumseil… - ECS …, 2013 - iopscience.iop.org
We report on the structural characterization of state-of-the-art SiGe graded buffers on Si
(001) substrates with a diameter of 300 mm with and without a backside stressor. The main …

Selective growth of strained Ge channel on relaxed SiGe buffer in shallow trench isolation for high mobility Ge planar and FIN p-FET

B Vincent, L Witters, O Richard, A Hikavyy… - ECS …, 2013 - iopscience.iop.org
Strained Ge channels on SiGe strain relaxed buffer are grown selectively in active areas
surrounded by Shallow Trench Isolations. Using advanced Reduced Pressure Chemical …

Off-axis Raman spectroscopy for nanoscale stress metrology

Z Khan, T Nuytten, P Favia, C Fleischmann… - Journal of Applied …, 2022 - pubs.aip.org
Raman spectroscopy is an effective tool for stress and compositional metrology in the
semiconductor industry. However, its application toward decoupling a complex stress state …

Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures

A Schulze, R Loo, P Ryan, M Wormington… - …, 2017 - iopscience.iop.org
The performance of heterogeneous 3D transistor structures critically depends on the
composition and strain state of the buffer, channel and source/drain regions. In this paper we …