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[PDF][PDF] Application of carbon nanotubes (CNT) on the computer science and electrical engineering: A review
In recent years, dimensions and sizes of components and parts in the computer and
electronic industries have been steadily reducing, as they are now considered very tiny tools …
electronic industries have been steadily reducing, as they are now considered very tiny tools …
New structure of tunneling carbon nanotube FET with electrical junction in part of drain region and step impurity distribution pattern
In this paper, by using electrical junction in part of drain region which includes stepwise
do** distribution, a new structure is proposed for tunneling carbon nanotube field-effect …
do** distribution, a new structure is proposed for tunneling carbon nanotube field-effect …
Cylindrical surrounding-gate MOSFETs with electrically induced source/drain extension
C Li, Y Zhuang, R Han - Microelectronics Journal, 2011 - Elsevier
A novel cylindrical surrounding gate MOSFETs with electrically induced source/drain
extension is proposed and demonstrated by numerical simulation for the first time. In the …
extension is proposed and demonstrated by numerical simulation for the first time. In the …
Methods in improving the performance of carbon nanotube field effect transistors
In this paper the new methods in improving the performance of carbon nanotube filed effect
transistors (CNTFETs) are reviewed and analyzed for the first time. Nano-meter dimensions …
transistors (CNTFETs) are reviewed and analyzed for the first time. Nano-meter dimensions …
Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions
A Naderi - Journal of Computational Electronics, 2016 - Springer
In this paper a novel graphene nanoribbon transistor with electrically induced junction for
source and drain regions is proposed. An auxiliary junction is used to form electrically …
source and drain regions is proposed. An auxiliary junction is used to form electrically …
Transport study of gate and channel engineering on the surrounding-gate CNTFETs based on NEGF quantum theory
W Wang, X Yang, N Li, G ** carbon nanotube field-effect transistor
Z Arefinia - Physica E: Low-dimensional Systems and …, 2009 - Elsevier
Carbon nanotube field-effect transistors (CNTFETs) can be fabricated with Ohmic-or
Schottky-type contacts. We focus here on Ohmic CNTFETs. The CNTFETs suffer from band …
Schottky-type contacts. We focus here on Ohmic CNTFETs. The CNTFETs suffer from band …