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Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges
Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide
(SiC) are rapidly making inroads into the power semiconductor markets dominated by the …
(SiC) are rapidly making inroads into the power semiconductor markets dominated by the …
Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure
The wireless communication and power transmission environment varies widely depending
on time and place, and thus reconfigurable devices and circuits are in high demand due to …
on time and place, and thus reconfigurable devices and circuits are in high demand due to …
Advanced SiC and GaN power electronics for automotive systems
M Kanechika, T Uesugi, T Kachi - 2010 international electron …, 2010 - ieeexplore.ieee.org
A power switching device is one of the key elements to determine the performance of hybrid
electric vehicles (HEVs) and pure electric vehicles (EVs). Recently, the power devices using …
electric vehicles (HEVs) and pure electric vehicles (EVs). Recently, the power devices using …
Role of self-heating and polarization in AlGaN/GaN-based heterostructures
The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN
transmission line model (TLM) heterostructures with a scaled source-to-drain distance. This …
transmission line model (TLM) heterostructures with a scaled source-to-drain distance. This …
AlGaN/GaN HEMT device physics and electrothermal modeling
Gallium nitride (GaN) has emerged as one of the most attractive materials for radio
frequency (RF) and power conversion technologies that require high-power and high …
frequency (RF) and power conversion technologies that require high-power and high …