2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …
discovered through the extensive experimental and theoretical efforts of chemists, material …
Two-dimensional materials prospects for non-volatile spintronic memories
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …
Review on spintronics: Principles and device applications
A Hirohata, K Yamada, Y Nakatani, IL Prejbeanu… - Journal of Magnetism …, 2020 - Elsevier
Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to
reduce their power consumption and to increase their memory and processing capabilities …
reduce their power consumption and to increase their memory and processing capabilities …
Two-dimensional magnetic crystals and emergent heterostructure devices
BACKGROUND The electron can be considered as a tiny magnet, with two opposite poles
defining its magnetic field associated with the spin and orbital motion. When such minuscule …
defining its magnetic field associated with the spin and orbital motion. When such minuscule …
[HTML][HTML] Spintronics based random access memory: a review
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction
P Qin, H Yan, X Wang, H Chen, Z Meng, J Dong, M Zhu… - Nature, 2023 - nature.com
Abstract Antiferromagnetic spintronics,,,,,,,,,,,,,,–is a rapidly growing field in condensed-
matter physics and information technology with potential applications for high-density and …
matter physics and information technology with potential applications for high-density and …
Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction
The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly
dependent on the relative orientation of magnetizations in ferromagnetic electrodes …
dependent on the relative orientation of magnetizations in ferromagnetic electrodes …
Simple rules for the understanding of Heusler compounds
Heusler compounds are a remarkable class of intermetallic materials with 1: 1: 1 (often
called Half-Heusler) or 2: 1: 1 composition comprising more than 1500 members. Today …
called Half-Heusler) or 2: 1: 1 composition comprising more than 1500 members. Today …
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs), is the key to
develo** magnetoresistive random-access-memory (MRAM), magnetic sensors and novel …
develo** magnetoresistive random-access-memory (MRAM), magnetic sensors and novel …
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile
storage cells in high-performance solid-state magnetic random access memories (MRAM) …
storage cells in high-performance solid-state magnetic random access memories (MRAM) …