Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors
S Wirths, AT Tiedemann, Z Ikonic, P Harrison… - Applied physics …, 2013 - pubs.aip.org
In this letter, we propose a heterostructure design for tunnel field effect transistors with two
low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in …
low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in …
Ohmic contacts to n-type germanium with low specific contact resistivity
A low temperature nickel process has been developed that produces Ohmic contacts to n-
type germanium with specific contact resistivities down to (2.3±1.8)× 10− 7 Ω-cm 2 for …
type germanium with specific contact resistivities down to (2.3±1.8)× 10− 7 Ω-cm 2 for …
[HTML][HTML] Defects in Ge and GeSn and their impact on optoelectronic properties
GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
We investigated Raman vibrational modes in silicon-germanium-tin layers grown epitaxially
on germanium/silicon virtual substrates using reduced pressure chemical vapor deposition …
on germanium/silicon virtual substrates using reduced pressure chemical vapor deposition …
Efficient In Situ Do** of Strained Germanium Tin Epilayers at Unusually Low Temperature
M Myronov, P Jahandar, S Rossi… - Advanced Electronic …, 2024 - Wiley Online Library
Efficient p‐and n‐type in situ do** of compressively strained germanium tin (Ge1‐xSnx)
semiconductor epilayers, grown by chemical vapor deposition on a standard Si (001) …
semiconductor epilayers, grown by chemical vapor deposition on a standard Si (001) …
Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate
We present a proof-of-concept demonstration of a Ge/a-Si hybrid photonic integrated circuit
platform utilizing a high-quality Ge-on-insulator (GeOI) wafer fabricated by wafer bonding …
platform utilizing a high-quality Ge-on-insulator (GeOI) wafer fabricated by wafer bonding …
Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ= 1550 nm
Low-voltage swing (≤ 1.0 V) high-contrast ratio (6 dB) electro-absorption modulation
covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum …
covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum …
High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures
A Nigro, E Jutzi, N Forrer, A Hofmann, G Gadea… - arxiv preprint arxiv …, 2024 - arxiv.org
A great deal of interest is directed nowadays towards the development of innovative
technologies in the field of quantum information and quantum computing, with emphasis on …
technologies in the field of quantum information and quantum computing, with emphasis on …
Integrated photonic materials for the mid‐infrared
While silicon photonic integrated circuits for the near‐infrared (IR) telecommunication band
have attracted great research interest in the past decade, recent advances offer …
have attracted great research interest in the past decade, recent advances offer …