Low-defect III-V integration on Si (1 0 0) requires atomically well-ordered heterointerfaces.
To this end, we study the interaction of As with Si (1 0 0) surfaces and the formation of …

In this paper we highlight the existence of tensile stress in heavily arsenic-doped epitaxial
silicon (Si: As) prepared by low pressure chemical vapor deposition. Despite the large size …

High-performance low-loss boron-passivated Schottky varactor diodes have been fabricated
in a silicon-on-glass substrate transfer technology, using laser-annealed back-wafer …

The effect of growth temperature and substitutional carbon on phosphorus autodo** in Si
grown by low pressure rapid thermal chemical vapor deposition was investigated. In the …

The linearity of a class-A, bipolar UHF power transistor is investigated. The device is
intended for transmission of signals with multiple (TV) channels. Mixing between the various …

For the first time, epilayers with an arsenic-doped spike of 50 nm width have been grown
and used in silicon bipolar junction transistors (BJTs). The epilayer has been optimized such …

An empirical model of As surface segregation during reduced-pressure chemical vapor
deposition Si epitaxy is presented. This segregation mechanism determines the resulting …

The invention relates to a method for fabricating a semicon ductor Substrate by providing a
silicon on insulator type Sub strate that includes a base, an insulating layer and a first …

Die 3-dimensionale Integration hat sich zur weiteren Erhöhung der Transistordichte und der
integrierten Funktionalität in Mikrochips als ein Standard durchgesetzt. Integrierte …

The use of CV measurements to profile the electrically active impurity profile of dopants has
long been popular as a fast and non-destructive measurement technique. In this work, an …