The past decade has been especially creative for spintronics since the (re) discovery of
various two dimensional (2D) materials. Due to the unusual physical characteristics, 2D …

Integrating oxide thin films on flexible substrates is a critical step toward future applications
of multifunctional oxides for flexible electronics and spintronic devices. As a demonstration …

Quantum interference effects (QIEs) dominate the appearance of low-temperature resistivity
minimum in colossal magnetoresistance manganites. The T 1/2 dependent resistivity under …

The reaction pathway of the oxygen reduction reaction (ORR) is strongly affected by the
electrolytic environment. Meanwhile, the ORR mechanism on transition-metal oxide …

A layer-by-layer epitaxial growth up to 227 atomic layers of ferrimagnetic insulator yttrium
iron garnet (YIG) thin films is achieved on (110)-oriented gadolinium gallium garnet …

Herein, intense red electroluminescence (674 nm) in a La 0.7 Sr 0.3 MnO 3 (LSMO)-SrRuO
3 (SRO) thin films heterostructure obtained by RF-magnetron sputtering is reported for the …

The exchange bias effect is an essential component of magnetic memory and spintronic
devices. Whereas recent research has shown that anisotropies perpendicular to the device …

Epitaxial growth of colossal magnetoresistive thin films of La0. 7Sr0. 3MnO3 (LSMO) has
been achieved on TiO2-terminated (001) SrTiO3 (STO) single-crystal substrates using PLD …

We have investigated the electrical transport properties of nanodevices fabricated from
exfoliated flakes of two-dimensional metallic ferromagnets Fe 3 GeTe 2 (FGT) and Fe 5 Ge 2 …

We investigated the tunability of the transport and magnetic properties in 7.5 nm La 0.7 Sr
0.3 MnO 3 (LSMO) epitaxial films in a field effect geometry with the ferroelectric copolymer P …