In 2 Se 3 is a semiconductor material that can be stabilized in different crystal structures (at
least one 3D and several 2D layered structures have been reported) with diverse electrical …

We demonstrate that β-In 2 Se 3 layers with thickness ranging from 2.8 to 100 nm can be
grown on SiO 2/Si, mica and graphite using a physical vapour transport method. The β-In 2 …

In this report, we demonstrate dual band vertical heterojunction photodetector realized by
integrating α-In 2 Se 3 with p-type GaN. Flakes of∼ 110 nm thickness were exfoliated on …

Solar energy-driven seawater desalination is a facile, green, and low-cost strategy to
address the energy and fresh water crisis. 2D layered alloy materials (2DLAMs) have …

In2Se3 films of different thicknesses were prepared by thermal evaporation technique. X-ray
diffraction measurements showed that the as-deposited In2Se3 films and those annealed at …

We prepared very thin amorphous InSe films and investigated the thickness dependence of
the nonlinear absorption by pump-probe and open aperture Z-scan techniques. While …

With density functional theory calculations, we systematically studied the adsorption and
migration properties of Li/Na/K ions on the β-In2Se3 monolayer to evaluate the performance …

First-principles calculations reveal a Mexican-hat potential energy surface (PES) for two-
dimensional (2D) In 2 Se 3. This unique PES leads to a pseudo-centrosymmetric …

In the present report, we have investigated the AgIn 5 Se 8 phase formation upon annealing
the Ag/In 2 Se 3 bilayer film prepared by the thermal evaporation technique. The optical …

The interplay between the strong intralayer covalent‐ionic bonds and the weak interlayer
van der Waals (vdW) forces between the neighboring layers of vdW crystals gives rise to …