The paper reviews applications of ABC-model to interpret internal quantum efficiency and its
droop in III-nitride light-emitting diodes. Advantages of the model, its intrinsic limitations, and …

Indium gallium nitride (InGaN)-based light-emitting diodes (LEDs) are considered a
promising candidate for red-green-blue (RGB) micro displays. Currently, the blue and green …

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

The emergence of efficient solid state light emitters was the result of the remarkable
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …

We obtain temperature-dependent recombination coefficients by measuring the quantum
efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes …

Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode
(LED) was evaluated from the external quantum efficiency measured as a function of current …

Light-emitting diodes (LEDs) are widely used for data transmission in emerging optical
wireless communications (OWC) systems. This paper analyzes the physical processes that …

By studying low radiative efficiency blue III-nitride light emitting diodes (LEDs), we find that
the ABC model of recombination commonly used for understanding efficiency behavior in …

Microscale visible light emitting diodes (LEDs), as well as LEDs and laser diodes operating
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …

Unipolar-light emitting diode like structures were grown by NH 3 molecular beam epitaxy on
c plane (0001) GaN on sapphire templates. Studies were performed to experimentally …