Catalytic condensers stabilize charge on either side of a high-k dielectric film to modulate
the electronic states of a catalytic layer for the electronic control of surface reactions. Here …

Y2O3 thin film was deposited by atomic layer deposition (ALD) with a new precursor yttrium
tris (N, N '-diisopropylacetamidinate), Y (iPr2amd) 3, and water. The precursor was thermally …

The statistics of electrical breakdown field (E bd) of Hf O 2 and Si O 2 thin films has been
evaluated over multiple length scales using macroscopic testing of standardized metal-oxide …

Metal-insulator-metal (MIM) capacitors with different HfO 2 thickness have been
investigated. The results show that both the capacitance density and voltage coefficients of …

Metal-insulator–metal (MIM) capacitors are inevitable and critical passive components in
analog, mixed-signal, and memory applications. These capacitors occupy nearly 40% of …

The relentless drive toward high-speed and high-density silicon-based integrated circuits
(ICs) has necessitated significant advances in processing technology. The entrance of …

The metal-insulator-metal (MIM) capacitor for analog and rf applications has been
developed with Zr O 2∕ Al 2 O 3∕ Zr O 2 laminate as the dielectric. The high capacitance …

Develo** alternative high dielectric constant (k) materials for use as gate dielectrics is
essential for continued advances in conventional inorganic CMOS and organic thin film …

High dielectric constant hafnium oxide films were formed by electron beam (e-beam)
evaporation on HF last terminated silicon (100) wafers. We report on the influence of low …

The paper reports on a theoretical description of work function of TiN, which is one of the
most used materials for the realization of electrodes and gates in CMOS devices. Indeed …