This paper reviews the conduction mechanisms in the gate dielectric films of MOSFETs for
VLSI and ULSI technologies. They include Fowler–Nordheim tunneling, internal Schottky (or …

The growth in data generation necessitates efficient data processing technologies to
address the von Neumann bottleneck in conventional computer architecture. Memory-driven …

The electrical characteristics of SiOx/ZrO2 and SiOx/Ta2O5 gate dielectric stacks are
investigated. The current–density JG in these dielectric stacks is shown to be strongly …

The most important instability mechanism in amorphous silicon-silicon nitride thin-film
transistors is charge trap** in the silicon nitride layer, which leads to a threshold voltage …

A generalized trap-assisted tunneling (GTAT) model is proposed in this work, where an
effective tunneling barrier of trapezoidal shape is considered, instead of the triangular …

In this study, a simple TiN/SiO2/p-Si tunneling junction structure was fabricated via thermal
oxidation growth on a Si substrate annealed at 600° C. After electroforming, the number of …

The charge retention characteristics in scaled SONOS nonvolatile memory devices with an
effective gate oxide thickness of 94 Å and a tunnel oxide of 15 Å are investigated in a …

The triple-dielectric polysilicon-blocking oxide-silicon nitride-tunnel oxide-silicon (SONOS)
structure is an attractive candidate for high density E/sup 2/PROMs suitable for …

We present an analytical retention model for scaled SONOS devices in the excess electron
state. In this model, trap-to-band tunneling and thermal excitation discharge mechanisms …

The off-state gate current in AlGaN/GaN high electron mobility transistors is shown to arise
from two parallel gate to substrate tunneling paths: a direct path, and a path via deep traps …