PFM (piezoresponse force microscopy)-aided design for molecular ferroelectrics

HY Zhang, XG Chen, YY Tang, WQ Liao… - Chemical Society …, 2021 - pubs.rsc.org
With prosperity, decay, and another spring, molecular ferroelectrics have passed a hundred
years since Valasek first discovered ferroelectricity in the molecular compound Rochelle …

Contact-separation-induced self-recoverable mechanoluminescence of CaF2:Tb3+/PDMS elastomer

W Wang, S Wang, Y Gu, J Zhou, J Zhang - Nature Communications, 2024 - nature.com
Centrosymmetric-oxide/polydimethylsiloxane elastomers emit ultra-strong non-pre-
irradiation mechanoluminescence under stress and are considered one of the most ideal …

Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of …

S Ramazanov, F Orudzhev, G Gajiev, V Holcman… - Applied Surface …, 2024 - Elsevier
Abstract A heterostructure BiFeO 3/TiO 2 (Nt) Ti (BFOT) was obtained by the atomic layer
deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an …

Coexistence and Interplay of Two Ferroelectric Mechanisms in Zn1‐xMgxO

J Yang, AV Ievlev, AN Morozovska… - Advanced …, 2024 - Wiley Online Library
Ferroelectric materials promise exceptional attributes including low power dissipation, fast
operational speeds, enhanced endurance, and superior retention to revolutionize …

Electrostatic effect on off-field ferroelectric hysteresis loop in piezoresponse force microscopy

H Qiao, O Kwon, Y Kim - Applied Physics Letters, 2020 - pubs.aip.org
Piezoresponse force microscopy (PFM) has been extensively utilized as a versatile and an
indispensable tool to understand and analyze nanoscale ferro-/piezoelectric properties by …

Voltage‐Driven Fluorine Motion for Novel Organic Spintronic Memristor

A Nachawaty, T Chen, F Ibrahim, Y Wang… - Advanced …, 2024 - Wiley Online Library
Integrating tunneling magnetoresistance (TMR) effect in memristors is a long‐term aspiration
because it allows to realize multifunctional devices, such as multi‐state memory and tunable …

Selective patterning of out-of-plane piezoelectricity in MoTe2 via focused ion beam

D Seol, S Kim, WS Jang, Y **, S Kang, S Kim, D Won… - Nano Energy, 2021 - Elsevier
Two-dimensional transition-metal dichalcogenides (TMDs) have a strain-sensitive nature
and can only exhibit in-plane piezoelectricity, owing to their in-plane inversion symmetry …

High-temperature enantiomeric azobenzene-based photoisomerized piezoelectrics: 4-(phenyldiazenyl) anilinium) d-and l-tartrate

X Mu, L Xu, YY Xu, HY Zhang, RG **ong - Materials Chemistry …, 2021 - pubs.rsc.org
Rochelle salt, as the initiator of piezoelectrics and ferroelectrics, has been a bridge between
homochirality as well as piezoelectricity and ferroelectricity since the late 19th century. One …

Coercive field modified via partial ion substitution, mechanical load and charge injection in (Ba, Ta, Cr) doped BiFeO3 films

A Garduno-Medina, FJ Flores-Ruiz, E Camps… - Ceramics …, 2023 - Elsevier
Abstract Changes in the coercive field of ferroelectric materials translate into variations in the
operating power consumption of ferroelectric devices. Here, we have used partial ion …

Ferroelectric State in an α-Nd2WO6 Polymorph Stabilized in a Thin Film

T Carlier, MH Chambrier, A Da Costa… - Chemistry of …, 2020 - ACS Publications
Taking advantage of strain engineering, Nd2WO6 (NdWO) thin films have been successfully
grown on (001)-oriented SrTiO3 single-crystal substrates by pulsed-laser deposition. High …