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PFM (piezoresponse force microscopy)-aided design for molecular ferroelectrics
With prosperity, decay, and another spring, molecular ferroelectrics have passed a hundred
years since Valasek first discovered ferroelectricity in the molecular compound Rochelle …
years since Valasek first discovered ferroelectricity in the molecular compound Rochelle …
Contact-separation-induced self-recoverable mechanoluminescence of CaF2:Tb3+/PDMS elastomer
Centrosymmetric-oxide/polydimethylsiloxane elastomers emit ultra-strong non-pre-
irradiation mechanoluminescence under stress and are considered one of the most ideal …
irradiation mechanoluminescence under stress and are considered one of the most ideal …
Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of …
S Ramazanov, F Orudzhev, G Gajiev, V Holcman… - Applied Surface …, 2024 - Elsevier
Abstract A heterostructure BiFeO 3/TiO 2 (Nt) Ti (BFOT) was obtained by the atomic layer
deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an …
deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an …
Coexistence and Interplay of Two Ferroelectric Mechanisms in Zn1‐xMgxO
Ferroelectric materials promise exceptional attributes including low power dissipation, fast
operational speeds, enhanced endurance, and superior retention to revolutionize …
operational speeds, enhanced endurance, and superior retention to revolutionize …
Electrostatic effect on off-field ferroelectric hysteresis loop in piezoresponse force microscopy
Piezoresponse force microscopy (PFM) has been extensively utilized as a versatile and an
indispensable tool to understand and analyze nanoscale ferro-/piezoelectric properties by …
indispensable tool to understand and analyze nanoscale ferro-/piezoelectric properties by …
Voltage‐Driven Fluorine Motion for Novel Organic Spintronic Memristor
A Nachawaty, T Chen, F Ibrahim, Y Wang… - Advanced …, 2024 - Wiley Online Library
Integrating tunneling magnetoresistance (TMR) effect in memristors is a long‐term aspiration
because it allows to realize multifunctional devices, such as multi‐state memory and tunable …
because it allows to realize multifunctional devices, such as multi‐state memory and tunable …
Selective patterning of out-of-plane piezoelectricity in MoTe2 via focused ion beam
Two-dimensional transition-metal dichalcogenides (TMDs) have a strain-sensitive nature
and can only exhibit in-plane piezoelectricity, owing to their in-plane inversion symmetry …
and can only exhibit in-plane piezoelectricity, owing to their in-plane inversion symmetry …
High-temperature enantiomeric azobenzene-based photoisomerized piezoelectrics: 4-(phenyldiazenyl) anilinium) d-and l-tartrate
X Mu, L Xu, YY Xu, HY Zhang, RG **ong - Materials Chemistry …, 2021 - pubs.rsc.org
Rochelle salt, as the initiator of piezoelectrics and ferroelectrics, has been a bridge between
homochirality as well as piezoelectricity and ferroelectricity since the late 19th century. One …
homochirality as well as piezoelectricity and ferroelectricity since the late 19th century. One …
Coercive field modified via partial ion substitution, mechanical load and charge injection in (Ba, Ta, Cr) doped BiFeO3 films
Abstract Changes in the coercive field of ferroelectric materials translate into variations in the
operating power consumption of ferroelectric devices. Here, we have used partial ion …
operating power consumption of ferroelectric devices. Here, we have used partial ion …
Ferroelectric State in an α-Nd2WO6 Polymorph Stabilized in a Thin Film
T Carlier, MH Chambrier, A Da Costa… - Chemistry of …, 2020 - ACS Publications
Taking advantage of strain engineering, Nd2WO6 (NdWO) thin films have been successfully
grown on (001)-oriented SrTiO3 single-crystal substrates by pulsed-laser deposition. High …
grown on (001)-oriented SrTiO3 single-crystal substrates by pulsed-laser deposition. High …