[PDF][PDF] Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
Progress in metal-organic chemical vapor deposition of high quality () 0001 N-polar (Al, Ga,
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Thermal boundary conductance across heteroepitaxial ZnO/GaN interfaces: assessment of the phonon gas model
We present experimental measurements of the thermal boundary conductance (TBC) from
78–500 K across isolated heteroepitaxially grown ZnO films on GaN substrates. This data …
78–500 K across isolated heteroepitaxially grown ZnO films on GaN substrates. This data …
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
A thermodynamic supersaturation model for gallium (Ga) was developed to describe GaN
growth characteristics in low-pressure metalorganic chemical vapor deposition. The model …
growth characteristics in low-pressure metalorganic chemical vapor deposition. The model …
[HTML][HTML] Localized surface phonon polariton resonances in polar gallium nitride
We demonstrate the excitation of localized surface phonon polaritons in an array of sub-
diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide …
diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide …
Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films
M Akiyama, T Kamohara, K Kano… - Applied Physics …, 2008 - pubs.aip.org
The authors have investigated the influence of oxygen concentration in sputtering gas on the
piezoelectric response of aluminum nitride (AlN) thin films prepared on silicon substrates …
piezoelectric response of aluminum nitride (AlN) thin films prepared on silicon substrates …
Fast growth of GaN epilayers via laser-assisted metal–organic chemical vapor deposition for ultraviolet photodetector applications
In this study, we successfully developed a carbon dioxide (CO2)-laser-assisted metal–
organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality …
organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality …
Al-and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD
M Takeuchi, H Shimizu, R Kajitani, K Kawasaki… - Journal of crystal …, 2007 - Elsevier
We report the growth of N-and Al-polar AlN layers on c-plane sapphire by flow-modulation
MOCVD (FM-MOCVD) with some flow sequence modifications. Surface polarities were …
MOCVD (FM-MOCVD) with some flow sequence modifications. Surface polarities were …
[HTML][HTML] Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
Periodically poled AlN thin films with submicron domain widths were fabricated for nonlinear
applications in the UV-VIS region. A procedure utilizing metalorganic chemical vapor …
applications in the UV-VIS region. A procedure utilizing metalorganic chemical vapor …
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: Progress and prospects
Due to their non-centrosymmetric crystal orientation, wurtzite III-nitride crystals have two
distinct orientations, ie III-polar and N-polar along the c-axis. Extensive effort has been …
distinct orientations, ie III-polar and N-polar along the c-axis. Extensive effort has been …