The sensitive dependence of a semiconductor's electronic, optical and magnetic properties
on dopants has provided an extensive range of tunable phenomena to explore and apply to …

Several research groups have been actively pursuing antimonide-based electronic devices
in recent years. The advantage of narrow-bandgap Sb-based devices over conventional …

We review some electron transport experiments on few-electron, vertical quantum dot
devices. The measurement of current versus source-drain voltage and gate voltage is used …

The study of single-electron phenomena associated with tunnelling in semiconductor
nanostructures has emerged in recent years as a major forefront of condensed matter …

The purpose of this review is to survey the status of the theory and experiment which can
contribute to our knowledge of plasmon excitations in synthetic semiconductor …

We investigate the electron transport in a quasi-one-dimensional constriction with an
attractive, finite-size impurity, in the ballistic limit theoretically. Within the envelope function …

We have observed a Fermi-edge singularity in the tunneling current between a two-
dimensional electron gas (2DEG) and a zero-dimensional localized state. A sharp peak in …

The ability of the low-temperature scanning tunneling microscope to manipulate atoms and
to build nanostructures with atomic precision can be extended to the manipulation of larger …

The authors measured low-temperature (6–28 K) conductance in nanoscale p-channel field-
effect transistors lightly doped with boron. They observed a conductance modulation, which …

To date, the only tools that have allowed the manipulation of matter at the atomic level are
scanning probe microscopes.[1] However, atomic manipulation in semiconductors is not …