CogniFiber: Harnessing Biocompatible and Biodegradable 1D Collagen Nanofibers for Sustainable Nonvolatile Memory and Synaptic Learning Applications

KA Rokade, DD Kumbhar, SL Patil, SS Sutar… - Advanced …, 2024 - Wiley Online Library
Here, resistive switching (RS) devices are fabricated using naturally abundant, nontoxic,
biocompatible, and biodegradable biomaterials. For this purpose, 1D chitosan nanofibers …

Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing

Z Li, T Wang, J Meng, H Zhu, Q Sun, DW Zhang… - Materials …, 2023 - pubs.rsc.org
The HfO2-based ferroelectric tunnel junction has received outstanding attention owing to its
high-speed and low-power characteristics. In this work, aluminum-doped HfO2 (HfAlO) …

Advancements in 2D layered material memristors: unleashing their potential beyond memory

KA Nirmal, DD Kumbhar, AV Kesavan… - npj 2D Materials and …, 2024 - nature.com
The scalability of two-dimensional (2D) materials down to a single monolayer offers exciting
prospects for high-speed, energy-efficient, scalable memristors. This review highlights the …

[PDF][PDF] Investigation of analog resistive switching in solution-processed lead-free perovskite Cs2SnI6 memristor for synaptic application

VP Singh, CP Singh, H Ranjan… - IEEE Trans. Electron …, 2023 - researchgate.net
Efficient learning processes in neuromorphic computing and the advancement of next-
generation artificial intelligence are heavily dependent on synaptic functions, specifically …

Control-Etched Ti3C2Tx MXene Nanosheets for a Low-Voltage-Operating Flexible Memristor for Efficient Neuromorphic Computation

J Gosai, M Patel, L Liu, A Lokhandwala… - … Applied Materials & …, 2024 - ACS Publications
Hardware neural networks with mechanical flexibility are promising next-generation
computing systems for smart wearable electronics. Overcoming the challenge of develo** …

Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films

D Khone, S Kumar, M Balal, SR Barman, S Kumar… - Scientific Reports, 2023 - nature.com
Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous
tantalum pentoxide (a-Ta2O5) and indium tin oxide (a-ITO) thin films on barium-borosilicate …

Experimental Validation of Switching Dependence of Nanoscale Y2O3 Memristors on Electrode Symmetry via Physical Electrothermal Modeling

MK Gautam, S Kumar, S Chaudhary… - ACS Applied …, 2023 - ACS Publications
In this work, the impact of symmetric and asymmetric electrodes on the resistive switching
(RS) behavior of the nanoscale Y2O3-based memristor is investigated with experiments. In …

Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques

SM Patil, SS Kundale, SS Sutar, PJ Patil, AM Teli… - Scientific Reports, 2023 - nature.com
In the present study, various statistical and machine learning (ML) techniques were used to
understand how device fabrication parameters affect the performance of copper oxide …

Exploring statistical approaches for accessing the reliability of Y2O3-based memristive devices

DD Kumbhar, S Kumar, M Dubey, A Kumar… - Microelectronic …, 2024 - Elsevier
Memristive devices have emerged as promising alternatives to traditional complementary
metal-oxide semiconductor (CMOS)-based circuits in the field of neuromorphic systems …