Studies of the properties and characteristics of transition metal silicides have been
stimulated by their (potential) use in integrated circuit technology. This review describes …

Experiments on rectifying contacts started in 1874 with the pioneering work of Braun who
observed asymmetries in transport of electrical current across metal/semiconductor …

ErSi1. 7 layers with high crystalline quality (χmin of Er is 1.5%) have been formed by 90 keV
Er ion implantation to a dose of 1.6× 1017/cm2 at 450° C using channeled implantation. The …

The formation of amorphous and equilibrium phases was investigated during the solid-
phase reaction of Gd thin film with (111) and (100) oriented Si substrate as a function of …

In this paper the effect of the growth temperature on the structural and electrical properties of
samarium silicide films is investigated. The growth of the epitaxial films is performed under …

Previous reports show that, among all rare-earth silicides, GdSi1. 7 is the most difficult one to
grow epitaxially with a good crystalline quality on a Si substrate. However, this letter shows …

The electrical and interface parameters of epitaxial orthorhombic, textured orthorhombic,
polycrystalline orthorhombic, and polycrystalline hexagonal GdSi 2/(100) p-Si Schottky …

A patterned CoSi2/Si substrate was used for the catalytic growth of carbon nanostructures
and nanotubes in the temperature range of 750–800 C, using acetylene/N2 as a reaction …

A systematic study was performed of the solid state reaction between a 100 nm thick layer of
a rare earth metal and a Si substrate. The solid state reaction of five different rare earth …

High dose 166Er or 160Gd implantations are used to form rare-earth (RE) silicides in Si.
After implanting 0.8− 2.0× 1017 at./cm2 with 90 keV into Si (111) substrates kept at∼ 450 to …