Gallium nitride is a wide bandgap semiconductor material with high electric field strength
and electron mobility that translate in a tremendous potential for radio-frequency …

The technological development of GaN high electron mobility transistor (HEMT) is on the
right track to compete with Si and SiC-based power transistors for the market segment of> …

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …

The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐
power devices. However, it is a big challenge to grow GaN on diamond due to the large …

Thermal management is critical in contemporary electronic systems, and integrating
diamond with semiconductors offers the most promising solution to improve heat dissipation …

Integration of diamond on GaN can ease the challenges associated with thermal
management of GaN-based power amplifiers which need to base on highly scaled …

Effective heat dissipation is the bottleneck problem for the development and
commercialization of GaN-based high-power electronic and photonic devices. To address …

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages
over traditional Si-based semiconductors in terms of high-power and high-frequency …

Growth of single-crystalline GaN on polycrystalline diamond is reported for the first time. The
structure was achieved using a combined process including selective diamond growth on …

To achieve high device performance and high reliability for the gallium nitride (GaN)-based
high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains …