Strain engineering based on either a global approach using high-mobility substrates or the
implementation of so-called processing-induced stressors has become common practice for …

This work provides a detailed study of 28 nm fully-depleted silicon-on-insulator (FD-SOI)
planar ultra-thin body and BOX (UTBB) MOSFETs for high frequency applications. All …

Pulsed IV and AC conductance or RF characterization techniques, within the time and the
frequency domain, respectively, represent two approaches for evaluating self-heating in …

This last decade silicon-on-insulator (SOI) MOS-FET technology has demonstrated its
potentialities for high frequency (reaching cutoff frequencies close to 500 GHz forn …

Experimental and modeling results are reported for high-performance strained-silicon
heterojunction bipolar transistors (HBTs), comprising a tensile strained-Si emitter and a …

Electrical results are presented for deep submicron strained Si MOSFETs fabricated on both
thick and thin SiGe strain relaxed buffers, SRBs. For the first time thin SRB devices are …

Silicon germanium (SiGe) is lattice mismatched to silicon by up to 4% depending on its Ge
content. Basic investigations on strained layer growth, interface properties and deviation …

The relaxation of variable thickness strained silicon layers on 20% and 50% germanium
composition virtual substrates have been quantified using two independent methods. High …

The impact of self-heating in strained-Si MOSFETs on the switching characteristics of a
complementary-metal-oxide-semiconductor (CMOS) inverter and the voltage gain of a push …

This brief compares the quality of ultrathin SiON dielectrics of nMOSFETs grown on strained-
Si layers with both thin and thick SiGe strain-relaxed buffers (SRBs). The gate leakage in the …