Zirconium oxide and zirconium-rich Zr x Hf1–x O2 thin films have attracted attention owing to
their switching stability and significant promise for commercial applications such as high …

HfO x memristor is one of the most promising candidates for nonvolatile memory and
neuromorphic computing applications, but for the latter, its gradual conduction modulation …

A first-principles study of native point defects in monoclinic, cubic, two different tetragonal,
and five different orthorhombic phases of hafnia (HfO 2) is presented. They include vacancy …

The charge-trap** process, with HfO 2 film as the charge-capturing layer, has been
investigated by using in situ electron energy-loss spectroscopy and in situ energy-filter …

Impact of set/reset pulse duration and amplitude on the endurance failure modes of TiN\Ta 2
O 5\Ta cells is investigated and is related to interaction between Oxygen and TiN bottom …

A design for a CMOS-compatible active waveguide is proposed in which the epsilon-near-
zero (ENZ) property of the indium-tin-oxide (ITO) is used to induce large variations in the real …

We have carried out a detailed study of the impact of oxygen vacancies (O), on the
performance and the lattice temperature variation in a stacked silicon nanosheet field effect …

In this paper, we report the fabrication of Schottky solar cell based on spray pyrolysed lead
oxide semiconductor thin films. The non-linear junction were created by using high work …

Deposition of a metal gate on high-K dielectric HfO 2 is known to generate oxygen vacancy
(OVs) defects. Positively charged OVs in the dielectric affect the gate electrostatics and …

The resistive switching (RS) properties of a thin Al2O3 layer and TiOx/Al2O3 bilayers
integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive …