ScGaN and ScAlN: emerging nitride materials
This review addresses the recent development and future prospects for Sc-based III-nitride
alloys in energy-efficient device applications. Wurtzite-structure ScAlN and ScGaN alloys are …
alloys in energy-efficient device applications. Wurtzite-structure ScAlN and ScGaN alloys are …
AlN/GaN Digital alloy for mid-and deep-ultraviolet optoelectronics
Abstract The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by
stacking ultra-thin (≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we …
stacking ultra-thin (≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we …
Enhanced blue photoluminescence realized by copper diffusion do** of ZnO thin films
ZnO thin films with blue photoluminescence (PL) have been fabricated through Cu diffusion
do**. A CuO_x-ZnO mixture, and Cu/ZnO double layer, films were prepared on …
do**. A CuO_x-ZnO mixture, and Cu/ZnO double layer, films were prepared on …
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
We systematically study the origins and mechanisms for unintentional incorporation of
gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto …
gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto …
Wedge-shaped electron blocking layer to improve hole transport and efficiency in green light-emitting diodes
We present an engineered wedge-shaped electron blocking layer to tackle the issue of hole
injection and transport into the active region. Poor hole injection and transport are one of the …
injection and transport into the active region. Poor hole injection and transport are one of the …
Aqueous synthesis of multilayer Mn: ZnSe/Cu: ZnS quantum dots with white light emission
C Wang, S Xu, Y Wang, Z Wang, Y Cui - Journal of Materials Chemistry …, 2014 - pubs.rsc.org
In this work, we prepared white-emitting multilayer Mn: ZnSe/Cu: ZnS quantum dots (QDs) in
an aqueous solution. The core–shell multilayer structure provides a unique opportunity to …
an aqueous solution. The core–shell multilayer structure provides a unique opportunity to …
Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes
Y Li, F Yun, X Su, S Liu, W Ding, X Hou - Journal of applied Physics, 2014 - pubs.aip.org
We investigated the hole injection mechanism in InGaN/GaN blue light-emitting diodes by
growing monolithic dual-wavelength multiple-quantum-wells and measuring the …
growing monolithic dual-wavelength multiple-quantum-wells and measuring the …
Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
We propose a new origin of unintentional gallium (Ga) incorporation during the epitaxial
growth of AlInN layers. We observed substantial amount of Ga in AlInN layers on GaN-free …
growth of AlInN layers. We observed substantial amount of Ga in AlInN layers on GaN-free …
Study of Low-Efficiency Droop in Semipolar ( ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence
The superior low-efficiency droop performance of semipolar () InGaN light-emitting diodes
(LEDs) makes it a hot candidate for efficient solid-state lighting and full-color displays. To …
(LEDs) makes it a hot candidate for efficient solid-state lighting and full-color displays. To …
Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes
L Li, Y Miyachi, M Miyoshi, T Egawa - Applied Physics Express, 2019 - iopscience.iop.org
We propose an innovative ultrathin AlGaN/InAlN heterojunction (HJ) inserted in AlGaN-
based deep ultraviolet light-emitting diode (DUV LED) structure. Theoretical investigations …
based deep ultraviolet light-emitting diode (DUV LED) structure. Theoretical investigations …