Performance analysis of gate-stack dual-material DG MOSFET using work-function modulation technique for lower technology nodes

SK Das, U Nanda, SM Biswal, CK Pandey, LI Giri - Silicon, 2022 - Springer
Short channel effects (SCEs) along with mobility degradation has a great impact on CMOS
technology below 100 nm. These effects can be overcome by using gate and channel …

Performance analysis of gate stack DG-MOSFET for biosensor applications

SK Parija, SK Swain, SM Biswal, S Adak, P Dutta - Silicon, 2022 - Springer
In this paper the performance of gate stack metal oxide semiconductor field effect transistor
(MOSFET) is investigated with respect to different bio molecules for application as biosensor …

Performance analysis of dmg-gos junctionless finfet with high-k spacer

AP Kumar, R Lorenzo - 2022 IEEE Silchar Subsection …, 2022 - ieeexplore.ieee.org
In this paper, the Dual Material Gate (DMG) Gate Oxide Stack (GOS) Junctionless FinFET
(JLFinFET) with high-k spacer is designed and analyzed its performance for nanoscale …

Comparison study of dg-mosfet with and without gate stack configuration for biosensor applications

SK Parija, SK Swain, S Adak, SM Biswal, P Dutta - Silicon, 2022 - Springer
In this Paper, we have studied and compared the performance of two different configurations
of simulation model advanced MOSFET devices which can be used for biosensor …

Study of linearity performance of graded channel gate stacks double gate MOSFET with respect to high-K oxide thickness

SK Swain, SK Das, S Adak - Silicon, 2020 - Springer
In this paper a double gate MOSFET having non uniform channel do** with gate stack
structure is explored to study the linearity analysis. The extractions of linearity parameters …

Study of DC and Analog/RF Performances Analysis of Short Channel Surrounded Gate Junctionless Graded Channel Gate Stack MOSFET

S Misra, SM Biswal, B Baral, SK Pati - Transactions on Electrical and …, 2023 - Springer
In order to pave the path for miniaturization process, surrounded gate junctionless graded
channel gate stack (SJLGCGS) MOSFET is reported in this present work, in the view of …

Influence of channel length and high-K oxide thickness on subthreshold DC performance of graded channel and gate stack DG-MOSFETs

S Adak, SK Swain, A Dutta, H Rahaman, CK Sarkar - Nano, 2016 - World Scientific
Comparative assessment of graded channel gate stack (GCGS) DG MOSFET structure is
done by using two-dimensional (2D) Sentrausu TCAD simulator for different high K oxide …

Development and investigation of DMDG-MOSFET biosensor for charged biomolecule detection

SK Das, SM Biswal, LI Giri, I Pahi, U Nanda - Physica Scripta, 2025 - iopscience.iop.org
The paper explores the analog and sensitivity parameter of a n-channel gate stack Dual
Material Double Gate (DMDG) MOSFET biosensor, specifically focusing on its response to a …

Effect of high-K spacer on the performance of non-uniformly doped DG-MOSFET

SK Swain, SK Das, SM Biswal, S Adak… - 2019 Devices for …, 2019 - ieeexplore.ieee.org
This paper presents the performance of non-uniformed doped double gate (DG) MOSFET
with different spacer variations with an aim to analysis the effects of short channel and …

Effect of high-K spacer on the performance of gate-stack uniformly doped DG-MOSFET

SK Das, SK Swain, SM Biswal, D Nayak… - 2019 Devices for …, 2019 - ieeexplore.ieee.org
In this work, we have analyzed the novelty of the Gate Stack Double Gate (DG) MOSFET
with respect to different spacer variations in order to reduce the short channel effect …