Ultra-dense (> 4,000 pixels per inch) and highly stable full-color III-nitride nanoscale pixels
are crucial for near-eye display technologies like virtual and augmented-reality glasses. In …

Red InGaN has attracted much attention recently for micro‐light‐emitting diode (microLED)
display applications. However, the consequences of spectral broadening are often …

We study the carrier dynamics for c-plane InGaN/GaN light-emitting diodes (LEDs) with
various emission wavelengths near the green gap using a small-signal electroluminescence …

Experiments have shown that the light-emission efficiency of indium gallium nitride [(In, Ga)
N] light-emitting diodes improves with increasing indium concentration. It is widely thought …

Significant effort has been devoted toward mitigating polarization fields in nitride LEDs, as
they are viewed as detrimental to light emission, albeit with limited success for red emission …

III-nitride semiconductors have revolutionized modern electronics by enabling high-power
radio-frequency and lighting technologies. These materials hold immense potential for new …

In this project, Lumileds, the University of Michigan, the University of New Mexico, Sandia
National Laboratories, and Ohio State University conducted a collaborative and …

The nature of competing processes leading to narrowing and broadening of the
electroluminescence spectra width at half maximum under the injection current in nitride …